UNISONIC TECHNOLOGIES CO., LTD DTC114T
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
FEATURES
NPN SILICON TRANSIS...
UNISONIC TECHNOLOGIES CO., LTD DTC114T
NPN DIGITAL
TRANSISTOR (BUILT- IN BIAS RESISTORS)
FEATURES
NPN SILICON
TRANSISTOR
* Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input.
EQUIVALENT CIRCUIT
*Pb-free plating product number:DTC114TL
ORDERING INFORMATION
Order Number Normal Lead Free Plating DTC114T-AE3-6-R DTC114TL-AE3-6-R DTD114T-AL3-6-R DTD114TL-AL3-6-R DTC114T-AN3-6-R DTC114TL-AN3-6-R
www.DataSheet4U.com
Package
SOT-23 SOT-323 SOT-523
Pin Assignment 1 2 3 E B C E B C E B C
Packing Tape Reel Tape Reel Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-054,B
DTC114T
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
NPN SILICON
TRANSISTOR
RATINGS UNIT 50 V 50 V 5 V 100 mA SOT-23/SOT-323 200 mW Collector Power Dissipation PC SOT-523 150 mW Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
SYMBOL BVCBO BVCEO BVEBO VCE(SAT) ICBO IEBO hFE RIN fT TEST CONDITIONS IC=50μA IC=1mA IE=50μA IC=10mA, IB=1mA VCB=50V VEB=4V...