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DTD114T

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NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD DTC114T NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) „ FEATURES NPN SILICON TRANSIS...


UTC

DTD114T

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UNISONIC TECHNOLOGIES CO., LTD DTC114T NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) „ FEATURES NPN SILICON TRANSISTOR * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. „ EQUIVALENT CIRCUIT *Pb-free plating product number:DTC114TL „ ORDERING INFORMATION Order Number Normal Lead Free Plating DTC114T-AE3-6-R DTC114TL-AE3-6-R DTD114T-AL3-6-R DTD114TL-AL3-6-R DTC114T-AN3-6-R DTC114TL-AN3-6-R www.DataSheet4U.com Package SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel „ MARKING www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-054,B DTC114T „ ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current NPN SILICON TRANSISTOR RATINGS UNIT 50 V 50 V 5 V 100 mA SOT-23/SOT-323 200 mW Collector Power Dissipation PC SOT-523 150 mW Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) SYMBOL BVCBO BVCEO BVEBO VCE(SAT) ICBO IEBO hFE RIN fT TEST CONDITIONS IC=50μA IC=1mA IE=50μA IC=10mA, IB=1mA VCB=50V VEB=4V...




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