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8050 Dataheets PDF



Part Number 8050
Manufacturers Stanson Technology
Logo Stanson Technology
Description NPN TRANSISTOR
Datasheet 8050 Datasheet8050 Datasheet (PDF)

NPN TRANSISTOR 1.5A 8050 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] PARAMETERS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Leakage Collector-Emitter Leakage Emitter-Base Leakage Collector-Emitter Saturation Voltage Base-Emiiter Saturation Voltage DC Current Gain Collector Current Peak Collector Current Current Gain Bandwidth Output Capacitance Power Dissipation Junction Temperature Storage Temperature Hfe1 Classificat.

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NPN TRANSISTOR 1.5A 8050 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] PARAMETERS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Leakage Collector-Emitter Leakage Emitter-Base Leakage Collector-Emitter Saturation Voltage Base-Emiiter Saturation Voltage DC Current Gain Collector Current Peak Collector Current Current Gain Bandwidth Output Capacitance Power Dissipation Junction Temperature Storage Temperature Hfe1 Classification Rank Range Ta=25¢J¡^ SYMBOL MIN TYP MAX UNIT CONDITION BVceo V Ic=0.1mA 25 BVcbo 45 V Ic=100uA BVebo V 5 Ie=100£g A Icbo 0.1 uA Vcb=40V Iceo 0.1 uA Vce=20V Iebo 0.1 uA Veb=5V www.DataSheet4U.com 0.6 V Ic=1500mA, Ib=50mA ^ Vce(sat¡ Vbe(sat) 1.2 V Ic=1500mA, Ib=50mA Hfe1 85 Vce=1V,Ic=50mA 300 Hfe2 50 Vce=1V,Ic=500mA Ic 1.5 A Icp 8 A(Pulse) fT MHz Vcb=6V, Ic=20mA 150 Cob 32 pF Vcb=20V,Ie=0,f=1MHz Pc 1.0 W Tj 150 ¢J Tstg -55 150 ¢J B 85-160 C 120-200 D 160-300 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 .


199-MSMVx 8050 M51137FP


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