NPN TRANSISTORS. 2N3055 Datasheet

2N3055 TRANSISTORS. Datasheet pdf. Equivalent

Part 2N3055
Description SILICON NPN TRANSISTORS
Feature UNISONIC TECHNOLOGIES CO., LTD 2N3055 PNP SILICON TRANSISTOR SILICON NPN TRANSISTORS  DESCRIPTI.
Manufacture UTC
Datasheet
Download 2N3055 Datasheet



2N3055
UNISONIC TECHNOLOGIES CO., LTD
2N3055
NPN SILICON TRANSISTOR
SILICON NPN TRANSISTORS
DESCRIPTION
The UTC 2N3055 is a silicon NPN transistor in TO-247 metal
case. It is intended for power switching circuits, series and shunt
regulators, output stages and high fidelity amplifiers.
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N3055L-T47-T
2N3055G-T47-T
Note: Pin Assignment: B: Base E: Emitter C: Case
Package
TO-247
Pin Assignment
123
BCE
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
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QW-R205-003.E



2N3055
2N3055
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( TA=25C ,unless otherwise specified )
PARAMETERS
SYMBOL
VALUE
UNITS
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
60
7
V
V
Collector-Emitter Voltage
Collector Current
VCEV
IC
70
15
V
A
Collector Peak Current (Note)
Base Current
ICM 15 A
IB 7 A
Base Peak Current (Note)
Total Dissipation at TA=25C
IBM 15 A
PD 90 W
Max. Operating Junction Temperature
TJ
200 C
Storage Temperature
TSTG
-65 ~ 200
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Sustaining
Voltage
VCEO(sus) IC=200mA, IB=0V
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current (TA=150C)
Emitter Cut-off Current
VCER(sus)
ICEO
ICEX
IEBO
IC=0.2 A, RBE=100 Ohms
VCE=30V, IB=0
VCE=100V, VBE(off)=1.5V
VCE=100V, VBE(off)=1.5V
VBE=7V, IC=0
ON CHARACTERISTICS
DC Current Gain(note)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
hFE
VCE(sat)
VBE(on)
IC=4A, VCE=4V
IC=10A, VCE=4V
IC=4A, IB=400mA
IC=10A, IB=3.3A
IC=4A, VCE=4V
SECOND BREAKDOWN
Second Breakdown Collector with
Base Forward Biased
DYNAMIC CHARACTERISTICS
Is/b VCE=60V, T=1.0s, Non-repetitive
Current Gain-Bandwidth Product
fT IC=0.5A, VCE=10V, f=1MHz
Small-Signal Current Gain
hFE IC=1A, VCE=4V, f=1kHz
Small-Signal Current Gain
Cut-off Frequency
fHFE IC=1A, VCE=4V, f=1.0kHz
Note: Pulse Test: Puls Width 300μs, Duty Cycle 2%
MIN TYP MAX UNIT
60 V
70 V
0.7 mA
1.0 mA
5.0 mA
5.0 mA
20 70
5
1.1 V
3.0 V
1.5 V
2.87 A
2.5 MHz
15 120
10 kHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R205-003.E





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