2N3773

UTC 2N3773/2N6099 COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solened drivers, DC to DC converters or inverts. P O W E R TRANSISTOR FEATURES *High safe operating area(100 tested) 150W and 100V *Complement Characterized for linear operation *High DC Current Gain and low saturation voltage Hfe=15(8A 4V) Vce(sat)=1.4V(Ic=8A,Ib=0.8A) *For Low Distortion Complementary Designs TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified ) PARAMETERS Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-emitter voltage Total Power dissipation Tc=25°C Dertate above 25°C Collector current continuous Peak Base current continuous Peak Thermal resistance Junction to Case Storage Temperature SYMBOL VCBO VCEO VEBO VCEX www.DataSheet4U.com Pc VALUE 160 140 7 160 150 0.855 UNITS V V V V W W/°C A A A A °C/W °C Ic 16 30 IB 4 15 1.17 -65 ~ +200 RθJC TSTG UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R205-001,A UTC 2N3773/2N6099 PARAMETER OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current Collector Cut-off Current P O W E R TRANSISTOR SYMBOL BVCBO BVCEX BVCER ICBO IEBO ICEX ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) TEST ...