2N7000

UNISONIC TECHNOLOGIES CO., LTD 2N7000 N-CHANNEL ENHANCEMENT MODE Power MOSFET „ DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications „ FEATURES *High density cell design for low RDS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability „ SYMBOL 1 TO-92 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2N7000L-T92-B 2N7000G-T92-B TO-92 2N7000L-T92-K 2N7000G-T92-K TO-92 2N7000L-T92-R 2N7000G-T92-R TO-92 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 SGD SGD SGD Packing Tape Box Bulk Tape Reel www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd. 1 of 5 QW-R502-059.C 2N7000 Power MOSFET „ ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS≤1MΩ) VDGR 60 V Gate -Source Voltage Continuous Non Repetitive (tp<50μs) VGS ±20 ±40 V V Maximum Drain Current Continuous Pulsed ID 115 mA 800 mA Maximum Power Dissipation Derated above 25°C PD 400 mW 3.2 mW/°C Operating and Storage Temperature TJ,TSTG -55 ~ +150 °C ...