DatasheetsPDF.com

HVU17

Renesas Technology

Variable Capacitance Diode

HVU17 Variable Capacitance Diode for VCO REJ03G0079-0400Z (Previous: ADE-208-021C) Rev.4.00 Sep.17.2003 Features • Good...


Renesas Technology

HVU17

File Download Download HVU17 Datasheet


Description
HVU17 Variable Capacitance Diode for VCO REJ03G0079-0400Z (Previous: ADE-208-021C) Rev.4.00 Sep.17.2003 Features Good linearity of C-V curve. To be usable at low voltage. High figure of merit. Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HVU17 Laser Mark E Package Code URP www.DataSheet4U.com Pin Arrangement Cathode mark Mark 1 E 2 1. Cathode 2. Anode Rev.1.00, Sep.17.2003, page 1 of 4 HVU17 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 −55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Capacitance Symbol VR IR C1 C3 C4.5 Capacitance ratio Figure of merit ESD-Capability * Note: 1 Min 15.0 — 50.0 16.1 5.23 5.60 50 80 Typ — — — — — — — — Max — 100 85.0 27.3 8.84 — — — Unit V nA pF Test Condition IR = 10 µA VR = 9 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4.5 V, f = 1 MHz n Q — — — V C1/C4.5 VR = 2.5 V, f = 10 MHz C = 200 pF, Both forward and reverse direction 1 pulse. 1. Failure criterion ; IR ≥ 100nA at VR =9 V Rev.1.00, Sep.17.2003, page 2 of 4 HVU17 Main Characteristic 10–8 Reverse current IR (A) 10–9 10–10 10–11 10–12 0 4 8 12 16 20 Reverse voltage VR (V) Fig.1 Reverse current vs. Reverse voltage 100 f = 1MHz Capacitance C (pF) 10 1.0 1.0 10 Reverse voltage VR (V) 40 Fig.2 Capacitance vs. Reverse voltage Rev.1.00, Sep.17.2003, page 3 o...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)