Variable Capacitance Diode
HVU17
Variable Capacitance Diode for VCO
REJ03G0079-0400Z (Previous: ADE-208-021C) Rev.4.00 Sep.17.2003
Features
• Good...
Description
HVU17
Variable Capacitance Diode for VCO
REJ03G0079-0400Z (Previous: ADE-208-021C) Rev.4.00 Sep.17.2003
Features
Good linearity of C-V curve. To be usable at low voltage. High figure of merit. Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No. HVU17 Laser Mark E Package Code URP
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Pin Arrangement
Cathode mark Mark 1
E
2 1. Cathode 2. Anode
Rev.1.00, Sep.17.2003, page 1 of 4
HVU17
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 −55 to +125 Unit V °C °C
Electrical Characteristics
(Ta = 25°C)
Item Reverse voltage Reverse current Capacitance Symbol VR IR C1 C3 C4.5 Capacitance ratio Figure of merit ESD-Capability * Note:
1
Min 15.0 — 50.0 16.1 5.23 5.60 50 80
Typ — — — — — — — —
Max — 100 85.0 27.3 8.84 — — —
Unit V nA pF
Test Condition IR = 10 µA VR = 9 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4.5 V, f = 1 MHz
n Q —
— — V
C1/C4.5 VR = 2.5 V, f = 10 MHz C = 200 pF, Both forward and reverse direction 1 pulse.
1. Failure criterion ; IR ≥ 100nA at VR =9 V
Rev.1.00, Sep.17.2003, page 2 of 4
HVU17
Main Characteristic
10–8
Reverse current IR (A)
10–9
10–10
10–11
10–12
0
4
8
12
16
20
Reverse voltage VR (V) Fig.1 Reverse current vs. Reverse voltage 100 f = 1MHz
Capacitance C (pF)
10
1.0 1.0
10 Reverse voltage VR (V)
40
Fig.2 Capacitance vs. Reverse voltage
Rev.1.00, Sep.17.2003, page 3 o...
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