Document
UNISONIC TECHNOLOGIES CO., LTD
MJE13005
NPN SILICON TRANSISTOR
NPN SILICON POWER TRANSISTORS
DESCRIPTION
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.
FEATURES
* VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С
tC @ 3A, 100°С is 180 ns (Typ) * 700V blocking capability * SOA and switching applications information
APPLICATIONS
* Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13005L-x-TA3-T
MJE13005G-x-TA3-T
MJE13005L-x-TF3-T
MJE13005G-x-TF3-T
MJE13005L-x-TM3-T
MJE13005G-x-TM3-T
MJE13005L-x-TMS-T
MJE13005G-x-TMS-T
MJE13005L-x-TMS2-T
MJE13005G-x-TMS2-T
MJE13005L-x-TMS4-T
MJE13005G-x-TMS4-T
MJE13005L-x-TN3-R
MJE13005G-x-TN3-R
MJE13005L-x-TND-R
MJE13005G-x-TND-R
MJE13005L-x-T2Q-T
MJE13005G-x-T2Q-T
MJE13005L-x-TQ3-T
MJE13005G-x-TQ3-T
MJE13005L-x-TQ3-R
MJE13005G-x-TQ3-R
MJE13005L-x-T60-K
MJE13005G-x-T60-K
MJE13005L-x-T6S-K
MJE13005G-x-T6S-K
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
TO-220 TO-220F TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-252D TO-262 TO-263 TO-263 TO-126 TO-126S
Pin Assignment 123 BCE BCE BCE BCE BCE BCE BCE BCE BCE BCE BCE BCE BCE
Packing
Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel Tube Tube Tape Reel Bulk Bulk
www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 10
QW-R203-018.Q
MJE13005
MARKING
PACKAGE
TO-220 TO-220F TO-251 TO-251S TO-251S2
TO-251S4 TO-252 TO-252D TO-262 TO-263
TO-126 TO-126S
NPN SILICON TRANSISTOR
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 10
QW-R203-018.Q
MJE13005
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO(SUS)
400
V
Collector-Emitter Voltage (VBE=0) Collector-Base Voltage
VCES VCBO
700 700
V V
Emitter Base Voltage Collector Current Base Current Emitter Current
Continuous Peak (1) Continuous Peak (1) Continuous Peak (1) TO-126/TO-126S TO-220F
VEBO IC ICM IB IBM IE IEM
9 4 8 2 4 6 12
40
V A A A A A A
TO-251/TO-251S
Power Dissipation at TC=25°С
TO-251S2/TO-251S4 TO-252/TO-252D
50 W
TO-220/TO-263 TO-262
TO-126/TO-126S TO-220F
PD
75 320
TO-251/TO-251S
Derate above 25°С
TO-251S2/TO-251S4
400 mW/°С
TO-252/TO-252D
TO-220/TO-263 TO-262
600
Operating and Storage Junction Temperature
TJ , TSTG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
Junction to Ambient Junction to Case
PARAMETER TO-126/TO-126S TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D TO-220/TO-263 TO-262/TO-220F TO-126/TO-126S TO-22.