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MJE13005 Dataheets PDF



Part Number MJE13005
Manufacturers UTC
Logo UTC
Description NPN SILICON POWER TRANSISTORS
Datasheet MJE13005 DatasheetMJE13005 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.  FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 700V blocking capability * SOA and sw.

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UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.  FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 700V blocking capability * SOA and switching applications information  APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13005L-x-TA3-T MJE13005G-x-TA3-T MJE13005L-x-TF3-T MJE13005G-x-TF3-T MJE13005L-x-TM3-T MJE13005G-x-TM3-T MJE13005L-x-TMS-T MJE13005G-x-TMS-T MJE13005L-x-TMS2-T MJE13005G-x-TMS2-T MJE13005L-x-TMS4-T MJE13005G-x-TMS4-T MJE13005L-x-TN3-R MJE13005G-x-TN3-R MJE13005L-x-TND-R MJE13005G-x-TND-R MJE13005L-x-T2Q-T MJE13005G-x-T2Q-T MJE13005L-x-TQ3-T MJE13005G-x-TQ3-T MJE13005L-x-TQ3-R MJE13005G-x-TQ3-R MJE13005L-x-T60-K MJE13005G-x-T60-K MJE13005L-x-T6S-K MJE13005G-x-T6S-K Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-220 TO-220F TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-252D TO-262 TO-263 TO-263 TO-126 TO-126S Pin Assignment 123 BCE BCE BCE BCE BCE BCE BCE BCE BCE BCE BCE BCE BCE Packing Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel Tube Tube Tape Reel Bulk Bulk www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 10 QW-R203-018.Q MJE13005  MARKING PACKAGE TO-220 TO-220F TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-252D TO-262 TO-263 TO-126 TO-126S NPN SILICON TRANSISTOR MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 10 QW-R203-018.Q MJE13005 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO(SUS) 400 V Collector-Emitter Voltage (VBE=0) Collector-Base Voltage VCES VCBO 700 700 V V Emitter Base Voltage Collector Current Base Current Emitter Current Continuous Peak (1) Continuous Peak (1) Continuous Peak (1) TO-126/TO-126S TO-220F VEBO IC ICM IB IBM IE IEM 9 4 8 2 4 6 12 40 V A A A A A A TO-251/TO-251S Power Dissipation at TC=25°С TO-251S2/TO-251S4 TO-252/TO-252D 50 W TO-220/TO-263 TO-262 TO-126/TO-126S TO-220F PD 75 320 TO-251/TO-251S Derate above 25°С TO-251S2/TO-251S4 400 mW/°С TO-252/TO-252D TO-220/TO-263 TO-262 600 Operating and Storage Junction Temperature TJ , TSTG -65 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA Junction to Ambient Junction to Case PARAMETER TO-126/TO-126S TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D TO-220/TO-263 TO-262/TO-220F TO-126/TO-126S TO-22.


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