RB520S-30

Data Sheet Schottky barrier diode RB520S-30 Applications Low current rectification Dimensions (Unit : mm) 0.8±0.05 0.12±0.05 Land size figure (Unit : mm) 0.8 0.6for 1.7 Features 1) Ultra Small mold type. (EMD2) 2) Low IR. 3) High reliability. Construction Silicon epitaxial planar 1.2±0.05d 1.6±0.1 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) 0.6±0.1 Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.05 φ1.55±0.05 EMD2 Structure 0.2±0.05 1.75±0.1 8.0±0.15 3.5±0.05 2.2.4405±±0.0.015NotNeRewcDoemsimgennsde 11..235±0.0066 0 11..2256±0.0.0065 00 0.6 Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg 00.9.905±±0.005.06 0 Emポptケy pッoトcket 4.0±0.1 Limits 30 200 1 125 -40 to +125 Unit V mA A °C °C 2.0±0.0...