RB520S-40

Data Sheet 1.2±0.05d for 1.6±0.1 0.6 1.7 Schottky Barrier Diode RB520S-40 Applications Rectifying small power Dimensions (Unit : mm) 0.8±0.05 0.12±0.05 Land size figure (Unit : mm) 0.8 Features 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability Construction Silicon epitaxial 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 0.6±0.1 φ1.5±0.05 φ1.55±0.05 EMD2 Structure 0.2±0.05 1.75±0.1 0.6 3.5±0.05 8.0±0.15 11..2256±0.0.0065 00 2.2.4405±±0.0.015NotNeRewcDoemsimgennsde 11..235±0.0066 0 00.9.905±±0.005.06 0 Emポptケy pッoトcket 4.0±0.1 2.0±0.05 φ0.5 0.2 00.7.756±±0.005.05 Absolute maximum ratings(Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak Junction temperature IFSM Tj Storage temperature Tstg Limit...