2SB1151

UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT  FEATURES *High Power Dissipation *Complementary to 2SD1691  ORDERING INFORMATION Ordering Number Lead Free Halogen Free - 2SB1151G-x-AA3-R 2SB1151L-x-T60-K 2SB1151G-x-T60-K 2SB1151L-x-TN3-R 2SB1151G-x-TN3-R Note: Pin Assignment: E: Emitter C: Collector Package SOT-223 TO-126 TO-252 B: Base Pin Assignment 123 ECB ECB BCE Packing Tape Reel Bulk Tape Reel  MARKING PACKAGE SOT-223 TO-126 TO-252 MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-022.D 2SB1151 PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation (Ta=25°C) DC Pulse(Note 2) SOT-223 TO-126 TO-252 VCBO VCEO VEBO IC ICP IB PD -60 V -60 V -7 V -5 A -8 A -1 A 1W 1.5 W 2W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2.PW≤10ms, Duty Cycle≤50%  ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sa...