2SB1412

2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 2 3 Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA = 25°C Junction Temperature Storage Temperature Symbol www.DataSheet4U.com Value -30 -20 -6 -5 1.0 +150 -55 to +150 Unit V V V A W ˚C ˚C VCBO VCEO VEBO IC PD Tj Tstg Device Marking 2SB1412 = B1412 WEITRON http://www.weitron.com.tw 1/4 28-Oct-05 2SB1412 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=-50µA, IE=0 Collector-Emitter Breakdown Voltage IC=-1.0mA, IB=0 Emitter-Base Breakdown Voltage IE=-50µA, IC=0 Collector Cut-Off Current VCB=-20V, IE=0 Emitter-Cut-Off Current VEB=-5V, IC=0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -30 -20 -6 Typ Max -500 -500 Unit V V V nA nA ON CHARACTERISTICS DC Current Gain VCE=-2V, IC=-0.5A Collector-Emitter Saturation Voltage IC=-4A, IB=-0.1A hFE VCE(sat) 82 390 -1.0 V DYNAMIC CHARACTERISTICS Transition Frequency VCE=-6V, IE=-50mA, f=30MHz Output Capacitance VCB=-20V, IE=0, f=1.0MHz fT Cob 120 60 MHz pF CLASSIFICATION OF hFE Rank Range P 82 - 180 Q 120 - 270 R 180 - 390 WEITRON http://www.weitron.com.tw 2/4 28-Oct-05 2SB1412 5k 2k DC CURRENT GAIN : hFE TA=25°C DC CURRENT GAIN : hFE 5k 2k 1k 500 2...