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2SB1412 Dataheets PDF



Part Number 2SB1412
Manufacturers UTC
Logo UTC
Description HIGH VOLTAGE SWITCHING TRANSISTOR
Datasheet 2SB1412 Datasheet2SB1412 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor.  FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R TO-252 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE Packin.

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UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor.  FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R TO-252 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-021.E 2SB1412 PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -6 V Collector Current(DC) IC -5 A Collector Current(PULSE) Single pulse, Pw=10ms ICP -10 A Collector Power Dissipation Collector Power Dissipation (TC=25C) (note2) PD 1W 10 W Junction Temperature TJ +150 C Storage Temperature TSTG -40 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. When mounted on a 40×40×0.7mm ceramic board.  ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(SAT) fT COB TEST CONDITIONS IC= -50μA IC= -1mA IE= -50μA VCB= -20V VEB= -5V VCE= -2V,Ic= -0.5A IC/IB= -4A/-0.1A VCE= -6V, IE= 50 mA, f=30MHz VCB= -20V, IE= 0 A, f=1MHz MIN TYP MAX UNIT -30 V -20 V -6 V -0.5 μA -0.5 μA 82 390 -1.0 V 120 MHz 60 pF  CLASSIFICATION OF hFE RANK RANGE P 82-180 Q 120-270 R 180-390 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R209-021.E 2SB1412  TYPICAL CHARACTERISTICS Collector Current: Ic(mA) Grounded Emitter Propagation Characteristics -10 -5 VCE = -2V -2 -1 -500m -200m -100m -50m Ta=100℃ Ta=25℃ Ta= -25℃ -20m -10m -5m -2m -1m 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Base to Emitter Voltage:VBE(V) DC Current Gain: hFE DC Current Gain vs.Collector Current (I) 5k Ta=25℃ 2k 1k 500 VcE= -5V 200 100 VcE= -2V 50 VcE= -1V 20 10 5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Current : Ic(A) DC Current Gain: hFE DC Current Gain vs.Collector Current (III) 5k VcE= -2V 2k 1k 500 Ta=100℃ 200 100 Ta= -25℃ Ta=25℃ 50 20 10 5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Current : Ic(A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Collector Saturation Voltage:VCE(SAT) ( V) DC Current Gain: hFE Collector Current: Ic(A) PNP SILICON TRANSISTOR Grounded Emitter Output Characteristics -5 -50mA -45mA -4 -30mA Ta=25℃ -25mA -20mA -15mA -3 -10mA -2 -35mA -40mA -5mA -1 0 IB =0mA 0 -0.4 -0.8 -1.2 -1.6 -2.0 Collector to Emitter Voltage:VCE(V) DC Current Gain vs.Collector Current(II) 5k VcE= -1V 2k 1k 500 Ta=100℃ 200 100 Ta=25℃ Ta= -25℃ 50 20 10 5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Current : Ic(A) Collector-emitter Saturation Voltage vs.Collector Current (I) -5 Ta=25℃ -2 -1 -0.5 -0.2 -0.1 -0.05 Ic/IB=50/1 40/1 30/1 10/1 -0.02 -0.01 -2m -5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Current : Ic(A) 3 of 5 QW-R209-021.E 2SB1412  TYPICAL CHARACTERISTICS(Cont.) Collector Saturation Voltage:VCE(SAT) ( V) Collector-emitter Saturation Voltage vs.Collector Current (II) -5 Ic/IB=10 -2 -1 -0.5 -0.2 -0.1 Ta=100℃ -0.05 Ta=25℃ -0.02 Ta= -25℃ -0.01 -2m -5m -0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Current : Ic(A) Collector Saturation Voltage:VCE(SAT) ( V) Collector-emitter Saturation Voltage vs.Collector Current (IV) -5 Ic/IB=40 -2 Ta= -25℃ -1 Ta=25℃ -0.5 -0.2 -0.1 -0.05 Ta=100℃ -0.02 -0.01 -2m -5m -0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 Collector Current : Ic(A) -5 -10 Transetion Frequency :fT (MHz) 1000 500 200 100 Gain Bandwidth Product vs.Emitter Current Ta=25℃ VcE= -6V 50 20 10 5 2 1 12 5 10 20 50 100200 500 1000 Emitter Current : IE(mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Collector Output Capacitance :Cob (pF) Collector Saturation Voltage:VCE(SAT) ( V) Collector Saturation Voltage:VCE(SAT) ( V) PNP SILICON TRANSISTOR Collector-emitter Saturation Voltage vs.Collector Current (III) -5 Ic/IB=30 -2 -1 Ta=100℃ -0.5 Ta=25℃ -0.2 -0.1 -0.05 -0.02 -0.01 -2m Ta= -25℃ -5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Current : Ic(A) Collector-emitter Saturation Voltage vs.Collector Current (V) -5 Ic/IB=50 Ta= -25℃ -2 Ta=25℃ -1 Ta=100℃ -0.5.


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