Document
UNISONIC TECHNOLOGIES CO., LTD
2SB1412
PNP SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
DESCRIPTION
The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor.
FEATURES
* Excellent DC current gain characteristics * Low VCE(SAT)
VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2SB1412L-x-TN3-R
2SB1412G-x-TN3-R
TO-252
Note: Pin Assignment: B: Base C: Collector E: Emitter
Pin Assignment 123 BCE
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R209-021.E
2SB1412
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO -30 V
Collector-Emitter Voltage
VCEO -20 V
Emitter-Base Voltage
VEBO -6 V
Collector Current(DC)
IC -5 A
Collector Current(PULSE) Single pulse, Pw=10ms
ICP
-10 A
Collector Power Dissipation Collector Power Dissipation (TC=25C) (note2)
PD
1W 10 W
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-40 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When mounted on a 40×40×0.7mm ceramic board.
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance
SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(SAT) fT COB
TEST CONDITIONS IC= -50μA IC= -1mA IE= -50μA VCB= -20V VEB= -5V VCE= -2V,Ic= -0.5A IC/IB= -4A/-0.1A VCE= -6V, IE= 50 mA, f=30MHz VCB= -20V, IE= 0 A, f=1MHz
MIN TYP MAX UNIT -30 V -20 V -6 V
-0.5 μA -0.5 μA 82 390 -1.0 V 120 MHz 60 pF
CLASSIFICATION OF hFE
RANK RANGE
P 82-180
Q 120-270
R 180-390
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-021.E
2SB1412
TYPICAL CHARACTERISTICS
Collector Current: Ic(mA)
Grounded Emitter Propagation Characteristics
-10
-5 VCE = -2V
-2 -1 -500m
-200m -100m
-50m
Ta=100℃
Ta=25℃ Ta= -25℃
-20m -10m
-5m
-2m -1m
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Base to Emitter Voltage:VBE(V)
DC Current Gain: hFE
DC Current Gain vs.Collector Current (I)
5k Ta=25℃
2k 1k
500 VcE= -5V
200 100 VcE= -2V
50 VcE= -1V
20 10
5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
DC Current Gain: hFE
DC Current Gain vs.Collector Current (III)
5k VcE= -2V
2k 1k 500 Ta=100℃
200 100 Ta= -25℃ Ta=25℃ 50
20 10
5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
UNISONIC TECHNOLOGIES CO., LTD
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Collector Saturation Voltage:VCE(SAT) ( V)
DC Current Gain: hFE
Collector Current: Ic(A)
PNP SILICON TRANSISTOR
Grounded Emitter Output
Characteristics
-5 -50mA -45mA
-4
-30mA Ta=25℃ -25mA -20mA
-15mA
-3 -10mA
-2 -35mA
-40mA
-5mA
-1
0 IB =0mA 0 -0.4 -0.8 -1.2 -1.6 -2.0
Collector to Emitter Voltage:VCE(V)
DC Current Gain vs.Collector Current(II)
5k VcE= -1V
2k 1k
500 Ta=100℃
200 100 Ta=25℃ Ta= -25℃ 50
20 10
5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
Collector-emitter Saturation Voltage vs.Collector Current (I)
-5 Ta=25℃
-2
-1
-0.5 -0.2 -0.1 -0.05
Ic/IB=50/1 40/1 30/1 10/1
-0.02 -0.01
-2m -5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Current : Ic(A)
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TYPICAL CHARACTERISTICS(Cont.)
Collector Saturation Voltage:VCE(SAT) ( V)
Collector-emitter Saturation Voltage vs.Collector Current (II)
-5 Ic/IB=10
-2
-1
-0.5
-0.2
-0.1 Ta=100℃
-0.05
Ta=25℃
-0.02
Ta= -25℃
-0.01 -2m
-5m -0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2
-5 -10
Collector Current : Ic(A)
Collector Saturation Voltage:VCE(SAT) ( V)
Collector-emitter Saturation Voltage vs.Collector Current (IV)
-5 Ic/IB=40
-2 Ta= -25℃
-1 Ta=25℃
-0.5 -0.2 -0.1 -0.05
Ta=100℃
-0.02 -0.01
-2m
-5m -0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 Collector Current : Ic(A)
-5 -10
Transetion Frequency :fT (MHz)
1000
500 200 100
Gain Bandwidth Product vs.Emitter Current
Ta=25℃ VcE= -6V
50
20 10
5
2 1
12
5 10 20 50 100200 500 1000 Emitter Current : IE(mA)
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Collector Output Capacitance :Cob (pF)
Collector Saturation Voltage:VCE(SAT) ( V)
Collector Saturation Voltage:VCE(SAT) ( V)
PNP SILICON TRANSISTOR
Collector-emitter Saturation Voltage vs.Collector Current (III)
-5 Ic/IB=30
-2
-1 Ta=100℃
-0.5 Ta=25℃
-0.2
-0.1
-0.05
-0.02 -0.01
-2m
Ta= -25℃ -5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
Collector-emitter Saturation Voltage
vs.Collector Current (V)
-5
Ic/IB=50
Ta= -25℃
-2 Ta=25℃
-1 Ta=100℃
-0.5.