2SB647

UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL  DESCRIPTION The UTC 2SB647 is a PNP epitaxial silicon transistor, which can be used as a low frequency power amplifier.  APPLICATION * Low frequency power amplifier  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB647L-x-T9N-B 2SB647G-x-T9N-B 2SB647L-x-T9N-K 2SB647G-x-T9N-K Package TO-92NL TO-92NL Pin Assignment 123 ECB ECB Packing Tape Box Bulk  MARKING INFORMATION PACKAGE TO-92NL MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R211-010.C 2SB647 PNP EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO -120 -80 V V Emitter-Base Voltage Collector Current VEBO IC -6 -1 V A Collector Peak Current Collector Power Dissipation ICP -2 A PC 0.9 W Junction Temperature Storage Temperature TJ TSTG 150 -55 ~ +150 °C °C Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≤10ms, Duty cycle≤20%  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cutoff Current DC...