2SB798

UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits.  FEATURES * Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -1.0A, IB = -100mA ) * Excellent DC Current Gain Linearity : hFE = 100 Typ. (VCE = -1.0V, IC = -1.0A)  ORDERING INFORMATION Order Number 2SB798G-x-AB3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 Pin Assignment 123 BCE Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R208-020.C 2SB798 PNP EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO -30 -25 V V Emitter-Base Voltage Collector Current DC Pulse(Note 1) VEBO IC -5.0 -1.0 -1.5 V A A Collector Dissipation (Note 2) PC 2 W Junction Temperature Storage Temperature TJ TSTG 150 -55 ~ +150 C C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≦10ms,Duty Cycle≦50% 3. When mounted on a ceramic substrate of 16cm2×0.7 mm.  ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Curre...