UNISONIC TECHNOLOGIES CO., LTD
2SC3355
NPN SILICON EPITAXIAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER
FEATURE...
UNISONIC TECHNOLOGIES CO., LTD
2SC3355
NPN SILICON EPITAXIAL
TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER
FEATURES
* Low Noise and High Gain * High Power Gain
1 TO-92
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SC3355L-T92-B
2SC3355G-T92-B
2SC3355L-T92-K
2SC3355G-T92-K
Note: Pin Assignment: B: Base E: Emitter C: Collector
Package
TO-92 TO-92
Pin Assignment 123 BEC BEC
2SC3355L-T92-B
(1)Packing Type
(1) B: Tape Box, K: Bulk
(2)Package Type (3)Lead Free
(2) T92: TO-92 (3) L: Lead Free, G: Halogen Free
Packing
Tape Box Bulk
MARKING INFORMATION
PACKAGE
TO-92
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD
1 of 3
QW-R201-036.C
2SC3355
NPN SILICON EPITAXIAL
TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
3
V
Collector current
IC 100 mA
Total power dissipation
PT 600 mW
Junction Temperature
TJ 125 °C
Operating Temperature
TOPR
-20 ~ +85
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain ...
