UNISONIC TECHNOLOGIES CO.,LTD
2SC3647
NPN SILICON TRANSISTOR
HIGH-VOLTAGE SWITCHING APPLICATIONS
FEATURES
* High b...
UNISONIC TECHNOLOGIES CO.,LTD
2SC3647
NPN SILICON
TRANSISTOR
HIGH-VOLTAGE SWITCHING APPLICATIONS
FEATURES
* High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density,
small-sized hybrid ICs
1 SOT-89
ORDERING INFORMATION
Ordering Number 2SC3647G-x-AB3-R Note: Pin Assignment: B: Base C: Collector E: Emitter
Package SOT-89
Pin Assignment 123 BCE
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R208-039.D
2SC3647
NPN SILICON
TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO 120 V
Collector to Emitter Voltage Emitter to Base Voltage
VCEO 100 V VEBO 6 V
Collector Current Collector Current (Pulse)
IC 2 A ICP 3 A
Collector Dissipation Junction Temperature
PC 500 mW TJ 150 °C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance DC Current Gai...