2SD1802
NPN PLASTIC ENCAPSULATE TRANSISTORS
P b Lead(Pb)-Free
1.BASE 2.COLLECTOR 3.EMITTER 1 2 3
D-PAK(TO-252) ABSOLUTE...
2SD1802
NPN PLASTIC ENCAPSULATE
TRANSISTORS
P b Lead(Pb)-Free
1.BASE 2.COLLECTOR 3.EMITTER 1 2 3
D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
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Symbol VCBO VCEO VEBO IC PD Tj Tstg
Limits 60 50 6.0 3.0 1.0 -55 to +150 -55 to +150
Unit V V V µA W ˚C ˚C
ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=10µA Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 60 50 6.0 Typ Max 1.0 1.0 Unit V V V µA µA
Collector-Emitter Breakdown Voltage IC=1.0mA Emitter-Base Breakdown Voltage IE=10µA
Collector Cutoff Current VCB=40V Collector Cutoff Current VEB =4.0V
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2SD1802
ON CHARACTERISTICS DC Current Gain VCE=2V, IC=0.1A VCE=2V, IC=3.0A Collector-Emitter Saturation Voltage IC =2A, IB =0.1A Base-Emitter Saturation Voltage IC =2A, IB =0.1A hFE(1) hFE(2) VCE(sat) VBE(sat) 100 35 560 0.5 1.2 V V
DYNAMIC CHARACTERISTICS Transition Frequency VCE=10V, I C=50mA Output Capacitance VCB=10V, IE=0, f=1.0MHz Turn-off time VCC=25V, IC=1A, IB1=-IB2=0.1A Fall time VCC=25V, IC=1A, IB1=-IB2=0.1A Storage time VCC=25V, IC=1A, IB1=-IB2=0.1A fT Cob ton tf ts 150 25 70 650 35 nS MHz pF
CLASSIFICATION OF hFE(1) Rank Range R 100 - 200 S 140 - 280 T 200 - 400 U 280 - 560
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2SD1802
Typ...