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2SD669A Dataheets PDF



Part Number 2SD669A
Manufacturers UTC
Logo UTC
Description NPN Transistor
Datasheet 2SD669A Datasheet2SD669A Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR  APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SD669xL-x-AA3-R 2SD669xG-x-AA3-R SOT-223 2SD669xL-x-AB3-R 2SD669xG-x-AB3-R SOT-89 2SD669xL-x-AE3-R 2SD669xG-x-AE3-R SOT-23 2SD669xL-x-AE3-6-R 2SD669xG-x-AE3-6-R SOT-23 2SD669xL-x-T60-K 2SD669xG-x-T60-K TO-126 2SD669x.

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UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR  APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SD669xL-x-AA3-R 2SD669xG-x-AA3-R SOT-223 2SD669xL-x-AB3-R 2SD669xG-x-AB3-R SOT-89 2SD669xL-x-AE3-R 2SD669xG-x-AE3-R SOT-23 2SD669xL-x-AE3-6-R 2SD669xG-x-AE3-6-R SOT-23 2SD669xL-x-T60-K 2SD669xG-x-T60-K TO-126 2SD669xL-x-T60-T 2SD669xG-x-T60-T TO-126 2SD669xL-x-T6C-K 2SD669xG-x-T6C-K TO-126C 2SD669xL-x-T6C-T 2SD669xG-x-T6C-T TO-126C 2SD669xL-x-T6S-K 2SD669xG-x-T6S-K TO-126S 2SD669xL-x-T6S-T 2SD669xG-x-T6S-T TO-126S 2SD669xL-x-T92-B 2SD669xG-x-T92-B TO-92 2SD669xL-x-T92-K 2SD669xG-x-T92-K TO-92 2SD669xL-x-T9N-B 2SD669xG-x-T9N-B TO-92NL 2SD669xL-x-T9N-K 2SD669xG-x-T9N-K TO-92NL 2SD669xL-x-TM3-T 2SD669xG-x-TM3-T TO-251 2SD669xL-x-TN3-R 2SD669xG-x-TN3-R TO-252 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E B C E E B C B E C E C B E C B E C B E C B E C B E C B E C B E C B E C B E C B B C E B C E Packing Tape Reel Tape Reel Tape Reel Tape Reel Bulk Tube Bulk Tube Bulk Tube Tape Box Bulk Tape Box Bulk Tube Tape Reel 2SD669xG-x-AE3-6-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Green Package (6) Collector-Emitter Voltage (1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube (2) refer to Pin Assignment (3) AA3: SOT-223, AB3: SOT-89, AE3: SOT-23 (2) T60: TO-126, T6C: TO-126C, T6S: TO-126S (2) TM3: TO-251, TN3: TO-252, T92: TO-92 (2) T9N: TO-92NL (4) x: refer to Classification of hFE1 (5) G: Halogen Free and Lead Free, L: Lead Free (6) A: 160V, Blank: 120V www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 6 QW-R204-005.T 2SD669/A  MARKINL INFORMATION PACKALE 2SD669 SOT-223 NPN SILICON TRANSISTOR MARKINL 2SD669A SOT-89 SOT-23 TO-126 TO-126C TO-126S TO-92 TO-92NL TO-251 TO-252 D66 L: Lead Free G: Halogen Free D66A L: Lead Free G: Halogen Free UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R204-005.T 2SD669/A NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINL (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINLS UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage 2SD669 2SD669A VCEO 120 160 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1.5 A Collector Peak Current lC(PEAK) 3 A Base Current IB 0.5 A SOT-223 1 W SOT-89 0.5 W Power Dissipation (TA=25°C) SOT-23 TO-251/TO-252 TO-126/TO-126S 0.35 W 2 W 1.3 W TO-126C 1 W TO-92/TO-92NL SOT-223 PD 0.6 W 8.93 W SOT-89 3.29 W Power Dissipation (TC=25°C) SOT-23 TO-251/TO-252 TO-126/TO-126S 1.14 W 27.78 W 20 W TO-126C 12.5 W TO-92/TO-92NL 1.56 W Junction Temperature TJ +150 °C Storage Temperature TSTL -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  HERMAL DATA PARAMETER SYMBOL RATINLS SOT-223 14 SOT-89 38 SOT-23 110 Junction to Case TO-251/TO-252 θJC 4.5 TO-126/TO-126S 6.25 TO-126C 10 TO-92/TO-92NL 80 Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. UNIT °C/W °C/W °C/W °C/W °C/W °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R204-005.T 2SD669/A NPN SILICON TRANSISTOR  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Collector to Base Breakdown Voltage BVCBO IC=1mA, IE=0 180 Collector to Emitter Breakdown 2SD669 Voltage 2SD669A BVCEO IC=10mA, RBE= 120 160 Collector to Emitter Breakdown 2SD669 Voltage (VBE=0V) 2SD669A BVCES IC=1mA, VBE=0V 120 160 Emitter to Base Breakdown Voltage BVEBO IE=1mA, IC=0 5 Collector Cut-off Current ICBO VCB=160V, IE=0 Emitter Cutoff Current IEBO VEB=4V, IC=0 ON CHARACTERISTICS DC Current Lain hFE1 VCE=5V, IC=150mA (Note) 60 hFE2 VCE=5V, IC=500mA (Note) 30 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(SAT) IC=600mA, IB=50mA (Note) VBE(SAT) IC=600mA, IB=50mA (Note) Base-Emitter Voltage VBE VCE=5V, IC=150mA (Note) DYNAMIC CHARACTERISTICS Current Lain Bandwidth Product Output Capacitance fT VCE=5V, IC=150mA (Note) Cob VCB=10V, IE=0, f=1MHz SWITCHINL CHARACTERISTICS Rise time Storage time Fall Time tR VCC=50V, IC=0.5A, tS IB1=IB2=10mA, tP=25μs, tF Duty Cycle≤1% Note: Pulse test.  CLASSIFICATION OF hFE1 RANK RANLE B 60-120 C 100-200 TYP MAX UNIT V V V V 10 μA 10 μA 320 1 V 1.2 V 1.5 V 140 MHz 14 pF 0.5 μs 1.5 μs 0.7 μs D 160-320 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R204-005.T 2SD669/A  TYPICAL CHA.


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