Document
UNISONIC TECHNOLOGIES CO., LTD
2SD669/A
NPN SILICON TRANSISTOR
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with UTC 2SB649/A
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2SD669xL-x-AA3-R
2SD669xG-x-AA3-R
SOT-223
2SD669xL-x-AB3-R
2SD669xG-x-AB3-R
SOT-89
2SD669xL-x-AE3-R
2SD669xG-x-AE3-R
SOT-23
2SD669xL-x-AE3-6-R
2SD669xG-x-AE3-6-R
SOT-23
2SD669xL-x-T60-K
2SD669xG-x-T60-K
TO-126
2SD669xL-x-T60-T
2SD669xG-x-T60-T
TO-126
2SD669xL-x-T6C-K
2SD669xG-x-T6C-K
TO-126C
2SD669xL-x-T6C-T
2SD669xG-x-T6C-T
TO-126C
2SD669xL-x-T6S-K
2SD669xG-x-T6S-K
TO-126S
2SD669xL-x-T6S-T
2SD669xG-x-T6S-T
TO-126S
2SD669xL-x-T92-B
2SD669xG-x-T92-B
TO-92
2SD669xL-x-T92-K
2SD669xG-x-T92-K
TO-92
2SD669xL-x-T9N-B
2SD669xG-x-T9N-B
TO-92NL
2SD669xL-x-T9N-K
2SD669xG-x-T9N-K
TO-92NL
2SD669xL-x-TM3-T
2SD669xG-x-TM3-T
TO-251
2SD669xL-x-TN3-R
2SD669xG-x-TN3-R
TO-252
Note: Pin Assignment: B: Base C: Collector E: Emitter
Pin Assignment
1
2
3
B
C
E
B
C
E
E
B
C
B
E
C
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
B
C
E
B
C
E
Packing
Tape Reel Tape Reel Tape Reel Tape Reel
Bulk Tube Bulk Tube Bulk Tube Tape Box Bulk Tape Box Bulk Tube Tape Reel
2SD669xG-x-AE3-6-R
(1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Green Package (6) Collector-Emitter Voltage
(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube (2) refer to Pin Assignment (3) AA3: SOT-223, AB3: SOT-89, AE3: SOT-23 (2) T60: TO-126, T6C: TO-126C, T6S: TO-126S (2) TM3: TO-251, TN3: TO-252, T92: TO-92 (2) T9N: TO-92NL (4) x: refer to Classification of hFE1 (5) G: Halogen Free and Lead Free, L: Lead Free (6) A: 160V, Blank: 120V
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QW-R204-005.T
2SD669/A
MARKINL INFORMATION
PACKALE
2SD669
SOT-223
NPN SILICON TRANSISTOR
MARKINL
2SD669A
SOT-89
SOT-23 TO-126 TO-126C TO-126S
TO-92
TO-92NL
TO-251 TO-252
D66
L: Lead Free G: Halogen Free
D66A
L: Lead Free G: Halogen Free
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SD669/A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINL (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINLS
UNIT
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
2SD669 2SD669A
VCEO
120 160
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1.5
A
Collector Peak Current
lC(PEAK)
3
A
Base Current
IB
0.5
A
SOT-223
1
W
SOT-89
0.5
W
Power Dissipation (TA=25°C)
SOT-23 TO-251/TO-252 TO-126/TO-126S
0.35
W
2
W
1.3
W
TO-126C
1
W
TO-92/TO-92NL SOT-223
PD
0.6
W
8.93
W
SOT-89
3.29
W
Power Dissipation (TC=25°C)
SOT-23 TO-251/TO-252 TO-126/TO-126S
1.14
W
27.78
W
20
W
TO-126C
12.5
W
TO-92/TO-92NL
1.56
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTL
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
HERMAL DATA
PARAMETER
SYMBOL
RATINLS
SOT-223
14
SOT-89
38
SOT-23
110
Junction to Case
TO-251/TO-252
θJC
4.5
TO-126/TO-126S
6.25
TO-126C
10
TO-92/TO-92NL
80
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNIT °C/W °C/W °C/W °C/W °C/W °C/W °C/W
UNISONIC TECHNOLOGIES CO., LTD
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NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector to Base Breakdown Voltage
BVCBO IC=1mA, IE=0
180
Collector to Emitter Breakdown 2SD669
Voltage
2SD669A
BVCEO IC=10mA, RBE=
120 160
Collector to Emitter Breakdown 2SD669
Voltage (VBE=0V)
2SD669A
BVCES IC=1mA, VBE=0V
120 160
Emitter to Base Breakdown Voltage
BVEBO IE=1mA, IC=0
5
Collector Cut-off Current
ICBO VCB=160V, IE=0
Emitter Cutoff Current
IEBO VEB=4V, IC=0
ON CHARACTERISTICS
DC Current Lain
hFE1 VCE=5V, IC=150mA (Note)
60
hFE2 VCE=5V, IC=500mA (Note)
30
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
VCE(SAT) IC=600mA, IB=50mA (Note) VBE(SAT) IC=600mA, IB=50mA (Note)
Base-Emitter Voltage
VBE VCE=5V, IC=150mA (Note)
DYNAMIC CHARACTERISTICS
Current Lain Bandwidth Product Output Capacitance
fT
VCE=5V, IC=150mA (Note)
Cob VCB=10V, IE=0, f=1MHz
SWITCHINL CHARACTERISTICS
Rise time Storage time Fall Time
tR
VCC=50V, IC=0.5A,
tS
IB1=IB2=10mA, tP=25μs,
tF
Duty Cycle≤1%
Note: Pulse test.
CLASSIFICATION OF hFE1
RANK RANLE
B 60-120
C 100-200
TYP MAX UNIT
V V
V
V 10 μA 10 μA
320
1
V
1.2 V
1.5 V
140
MHz
14
pF
0.5
μs
1.5
μs
0.7
μs
D 160-320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SD669/A
TYPICAL CHA.