2SD879

UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS  DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications.  FEATURES * In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. * The charge time is approximately 1 second faster than that of germanium transistors. * Less power dissipation because of lWO Collector-to-Emitter Voltage VCE(SAT), permitting more flashes of light to be emitted. * Large current capacity and highly resistant to break-down. * Excellent linearity of hFE in the region from low current to high current.  ORDERING INFORMATION Ordering Number Lead Free Halogen Free - 2SD879G-AB3-R 2SD879L-T92-B 2SD879G-T92-B 2SD879L-T92-K 2SD879G-T92-K Note: Pin Assignment: E: Emitter C: Collector Package SOT-89 TO-92 TO-92 B: Base Pin Assignment 123 BCE ECB ECB Packing Tape Reel Tape Box Bulk  MARKING SOT-89 TO-92 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R208-010.C 2SD879 NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING ( TA=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEX 20 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage VEBO 6 V Collector Dissipation PD 1 W Collector Current (DC) IC 3 A Collector Current (PULSE) ICP 5 A Junction Temperature T...