2SD882ANL

UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772ANL APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE *Pb-free plating product number: 2SD882ANLK ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) PARAMETERS Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation Collector current(DC) Collector current(PULSE) Base current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Ic IB Tj TSTG www.DataSheet4U.com RATINGS 40 30 5 1 3 7 0.6 150 -55 ~ +150 UNIT V V V W A A A °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified) PARAMETER Collector cut-off current Emitter cut-off current DC current gain(note 1) SYMBOL TEST CONDITIONS VCB=30V,IE=0 VEB=3V,Ic=0 VCE=2V,Ic=20mA VCE=2V,Ic=1A Ic=2A,IB=0.2A Ic=2A,IB=0.2A VCE=5V,Ic=0.1A VCB=10V,IE=0,f=1MHz MIN TYP MAX 1000 1000 UNIT nA nA ICBO IEBO hFE1 hFE2 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Current gain bandwidth product fT Output capacitance Cob Note 1:Pulse test:PW<300µs,Duty Cycle<2% 30 100 200 150 0.3 1.0 80 45 400 0.5 2.0 V V MHz pF UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R211-016,B UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE2 RANK RANGE Q 100-200 P 160-320 E 200-400 TYPICAL PARAMETERS PERFORMANCE Fig.1 St...