2SD965B

UTC 2SD965B LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965B : Collector-Emitter voltage up to 30 V NPN EPITAXIAL SILICON TRANSISTOR APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE *Pb-free plating product number: 2SD965BL ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation(Ta=25°C) Collector current Junction Temperature Storage Temperature SYMBOL VCBO VCEO www.DataSheet4U.com VEBO Pc Ic Tj TSTG RATINGS 40 30 7 750 5 150 -65 ~ +150 UNIT V V V mW A °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified) PARAMETER SYMBOL Collector-base breakdown voltage BVCBO Collector-emitter breakdown BVCEO voltage Emitter-base breakdown voltage BVEBO Collector cut-off current ICBO Emitter cut-off current IEBO hFE 1 DC current gain(note) hFE 2 hFE 3 Collector-emitter saturation voltage VCE(sat) Current gain bandwidth product fT Output capacitance Cob TEST CONDITIONS Ic=100µA,IE=0 Ic=1mA,IB=0 IE=10µA,Ic=0 VCB=30V,IE=0 VEB=7V,Ic=0 VCE=2V,Ic=1mA VCE=2V,Ic=0.5A VCE=2V,Ic=2A Ic=3A, IB= 0.1A VCE=6V,Ic=50mA VCB=20V,IE=0, f=1MHz MIN 40 30 7 200 200 200 230 150 150 50 800 1 V MHz pF TYP MAX UNIT V V V nA nA CLASSIFICATION OF hFE2 RANK RANGE Q 230-380 R 340-600 S 560-800 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-078,B www.unisonic.com.tw UTC 2SD965B TYPICAL CHARACTERISTIC CURVES Fig....