2SK2751

UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JUNCTION FET N-CHANNEL JFET  FEATURES * Low noise-figure (NF). * High gate to drain voltage VGDO.  APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor.  ORDERING INFORMATION Ordering Number 2SK2751G-AE3-R 2SK2751G-AL3-R Note: Pin Assignment: D: Drain S: Source G: Gate Package SOT-23 SOT-323 Pin Assignment 123 DSG DSG Packing Tape Reel Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-067.D 2SK2751 N-CHANNEL JFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate-Drain Voltage VGDS -40 V Drain Current ID 10 mA Gate Current Allowable Power Dissipation IG 2 mA PD 200 mW Channel Temperature TCH +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25±3°C, unless otherwise specified) PARAMETER Gate-Drain Voltage Gate-Source Cut-Off Voltage Drain-Source Cut-Off Current Gate-Source Leakage Current Forward Transfer Admittance Input Capacitance (Common Source) Output Capacitance (Common Source) Reverse Transfer Capacitance (Common Source) SYMBOL VGDS VGSC IDSS IGSS | Yfs | CISS COSS CRSS TEST CONDITIONS IG=-100μA, VDS=0 VDS=10V, ID=1μA VDS=10V,...