BF422

UNISONIC TECHNOLOGIES CO., LTD BF422 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  FEATURES * Collector-Emitter Voltage: VCEO=250V. * Complementary to UTC BF423. 1 TO-92  ORDERING INFORMATION Ordering Number Lead Free Halogen Free BF422L-T92-B BF422G-T92-B BF422L-T92-K BF422G-T92-K Package TO-92 TO-92 Pin Assignment 123 ECB ECB Packing Tape Box Bulk www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., LTD 1 of 4 QW-R201-063.C BF422 NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 250 V Collector-Emitter Voltage VCEO 250 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 50 mA collector current (Peak) ICP 100 mA base current IB 50 mA Collector Power dissipation PC 625 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature range and assured by design from –20°C ~85°C.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC current gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition frequency Reverse Trans...