D45H2

UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D45H2 is a general purpose power application and switching. FEATURE *Low Collector-Emitter Saturation Voltage VCE(sat)=-1v(MAX)@-15A *Fast Switching Speeds 1 TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS(Ta=25°C) PARAMETER Collector to Emitter Voltage Emitter To Base Voltage Collector Current(DC) Collector Dissipation(Tc=25°C) Collector Dissipation(Ta=25°C) Junction Temperature Storage Temperature *PW<=10mS,Duty Cycle<=50% SYMBOL VCEO VEBO IC Pc www.DataSheet4U.com Pc Tj Tstg VALUE -30 -5 -10 50 1.67 150 -55 ~ +150 UNIT V V A W W °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C) PARAMETER Collector Cutoff Current Emitter Cutoff current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain Current Gain Bandwidth Product Output Capacitance Turn On Time Storage Time Fall Time SYMBOL ICES IEBO VCE(SAT) VBE(SAT) hFE1 FT CCB ton tstg tf TEST CONDITIONS VCE=Rated ; VCEO,VEB=0 VEB=-5V,Ic=0 IC=-10A,IB=-0.1A IC=-10A,IB=-1A IC=-10A,VCE=-1V VCE=-10V,IC=-0.5A VCB=-10V,f=1MHZ Ic=-5A,IB=-0.5A IB=-0.5A MIN TYP MAX -10 1 -1 -1.5 UNIT µA µA V V MHZ PF nS nS nS 100 40 230 135 500 100 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R203-003,B UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN 100 TYPICAL CHARACTERISTION POWER DERATING POWER DISSIPATION, P D (WATTS) 50 45 40 35 30 25 20 15 10 5 0 0 25 75 100 50 TEMPERATURE, Tc ( ℃) 125 1...