UNISONIC TECHNOLOGIES CO., LTD
DTA115T
PNP SILICON TRANSISTOR
DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)
FEATU...
UNISONIC TECHNOLOGIES CO., LTD
DTA115T
PNP SILICON
TRANSISTOR
DIGITAL
TRANSISTORS (BUILT- IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to
allow positive input.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Package
DTA115TG-AE3-R
SOT-23
Note: Pin Assignment: E: Emitter B: Base C: Collector
Pin Assignment 123 EBC
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-062.C
DTA115T
PNP SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-50 V
Collector-Emitter Voltage Emitter-Base Voltage
VCEO VEBO
-50 V -5 V
Collector Current Collector Power Dissipation
IC
-100
mA
PC 200 mW
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55~+150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
BVCBO BVCEO
IC=-50μA IC=-1mA
-50 V -50 V
Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage
BVEBO IE=-50μA VCE(SAT) IC=-1m...