2SD2098

2SD2098 NPN Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC I CP Collector Power Dissipation Junction Temperature, Storage Temperature www.DataSheet4U.com Value 20 50 6.0 5.0 10 0.5 150, -55 to +150 Unit Vdc Vdc Vdc Adc(DC) Adc (Pulse) (1) W PC Tj , Tstg % C Device Marking 2SD2098Q=AHQ, 2SD2098R=AHR ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 50 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 50 µAdc, IC=0) Collector Cutoff Current (VCB= 40 Vdc, IE=0) Emitter Cutoff Current (VEB=5.0 Vdc, IC =0) Note: 1. Single pulse pw=10ms Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 20 50 6.0 Max 0.5 0.5 Unit Vdc Vdc Vdc uAdc uAdc WE ITR O N http://www.weitron.com.tw 2SD2098 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC=0.5 Adc, VCE=2.0 Vdc) Collector-Emitter Saturation Voltage (IC=100 mAdc, IB=4 Adc) Transition Frequency (IE=-50 mAdc, VCE=6.0 Vdc,f=100 MHz) Output Capacitance (IE=0 Adc, VCE=20 Vdc,f=1 MHz) hFE VCE(sat) fT Cob 120 0.3 150 35 390 1.0 Vdc MHz PF CLASSIFICATION OF hFE Item Range Q 120-270 R 180-390 WEITRON http://www.weitron.com.tw 2SD2098 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m ...