2SD2672

2SD2672 Transistors Low frequency amplifier 2SD2672 zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm) TSMT3 1.0MAX 2.9 0.4 0.85 0.7 zFeatures 1) A collector current is large. (4A) 2) VCE(sat) ≦ 250mV At IC = 2A / IB = 40mA (1) Base (2) Emitter (3) Collector (3) 1.6 2.8 0~0.1 0.3~0.6 0.16 (1) (2) 0.95 0.95 1.9 Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Unit Limits V 15 www.DataSheet4U.com V 12 6 V 4 A 8 A∗1 500 mW 1 ∗2 W 150 °C −55 to +150 °C zPackaging specifications Package Type Code Basic ordering unit (pieces) 2SD2672 Taping TL 3000 ∗1 Single pulse, PW=1ms ∗2 Mounted on a 25×25× t 0.8mm Ceramic substrate zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance ∗ Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 15 12 6 − − − 270 − − Typ. − − − − − 70 − 250 60 Max. − − − 100 100 250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=10µA IC=1mA IE=10µA VCB=15V VEB=6V IC=2A, IB=40mA VCE=2V, IC=200mA ∗ VCE=2V, IE=−200mA, f=100MHz ∗ VCB=10V, IE=0A, f=1M...