2SD2679
Transistors
2A / 30V Bipolar transistor
2SD2679
zApplications Low frequency amplification, driver zExternal dim...
2SD2679
Transistors
2A / 30V Bipolar
transistor
2SD2679
zApplications Low frequency amplification, driver zExternal dimensions (Unit : mm)
MPT3
4.5 1.6
0.5
1.5
zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) ≤ 350mV at IC = 1.5A, IB = 75mA)
(1)Base
(1)
(2)
(3)
1.0
2.5 4.0
0.4
0.4 1.5
0.5 1.5 3.0
0.4
zStructure
NPN epitaxial planar silicon
transistor
(2)Collector (3)Emitter
Abbreviated symbol : XZ
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 30 30 6 2 4 0.5 2 150 −55 to +150
∗1 ∗2 ∗3
zPackaging specifications
Unit V V
www.DataSheet4U.com
Package Packaging type Code Part No. 2SD2679 Basic ordering unit (pieces)
MPT3 Taping T100 1000
V A
W °C °C
∗1 Pw=1ms, single pulse. ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 40×40×0.7mm ceramic board.
zElectrical characteristics (Ta=25°C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance
∗ Pulsed
Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) ∗ hFE fT Cob
Min. Typ. Max. Unit 30 30 6 − − − 270 − − − − − − − 180 − 280 20 − − − 100 100 370 680 − ...
