N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
4N60
4.0A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60 is a high voltage power...
Description
UNISONIC TECHNOLOGIES CO., LTD
4N60
4.0A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
FEATURES
* RDS(ON) ≤ 2.5 Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness
SYMBOL
Power MOSFET
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1 of 9
QW-R502-061.AB
4N60
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
4N60L-TA3-T
4N60G-TA3-T
TO-220
4N60L-TF1-T
4N60G-TF1-T
TO-220F1
4N60L-TF2-T
4N60G-TF2-T
TO-220F2
4N60L-TF3-T
4N60G-TF3-T
TO-220F
4N60L-TF3T-T
4N60G-TF3T-T
TO-220F3
4N60L-TM3-T
4N60G-TM3-T
TO-251
4N60L-TMS-T
4N60G-TMS-T
TO-251S
4N60L-TN3-R
4N60G-TN3-R
TO-252
4N60L-TND-R
4N60G-TND-R
TO-252D
4N60L-T2Q-T
4N60G-T2Q-T
TO-262
4N60L-TQ2-T
4N60G-TQ2-T
TO-263
4N60L-TQ2-R
4N60G-TQ2-R
TO-263
4N60L-P5060-R
4N60G-P5060-R
PDFN5×6
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 12345678
Packing
GDS - - - - -
Tube
GDS - - - - -
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GDS - - - - -
Tube
GDS - - - - -
Tube
GDS - - - - -
Tube
GDS - - - - -
Tube
GDS ...
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