BC327, BC327-16, BC327-25, BC327-40
Amplifier Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RAT...
BC327, BC327-16, BC327-25, BC327-40
Amplifier
Transistors
PNP Silicon
Features
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
Symbol VCEO VCES VEBO
IC PD
Value −45 −50 −5.0 −800 625 5.0
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Power Dissipation @ TA = 25°C Derate above TA = 25°C
Operating and Storage Junction Temperature Range
PD TJ, Tstg
1.5 12 −55 to +150
W mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Co...
