UNISONIC TECHNOLOGIES CO., LTD
IMT2A
PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE DUAL TRANSISTOR
DESCRIPTION
...
UNISONIC TECHNOLOGIES CO., LTD
IMT2A
PNP EPITAXIAL SILICON
TRANSISTOR
GENERAL PURPOSE DUAL
TRANSISTOR
DESCRIPTION
The UTC IMT2A is a general purpose dual
transistor within two chips in a SMT package.
FEATURES
* Two MMBT9015 chips in an SMT package.
EQUIVALENT CIRCUITS
ORDERING INFORMATION
Order Number IMT2AG-AG6-R
IMT2AG-AG6-R
(1)Packing Type (2)Package Type (3)Green Package
MARKING
Package SOT-26
Pin Description 123456 C1 B2 C2 E2 E1 B1
Packing Tape Reel
(1) R: Tape Reel (2) AG6: SOT-26 (3) G: Halogen Free and Lead Freee
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QW-R215-003.E
IMT2A
PNP EPITAXIAL SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage Collector to Emitter voltage
VCBO -60 V VCEO -50 V
Emitter to Base Voltage Collector Current
VEBO IC
-6 -150
V mA
Collector Power Dissipation (total) Junction Temperature
PC TJ
300(Note) 150
mW °C
Storage Temperature
TSTG
-55~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. 200mW per element must not be exceeded.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Base Breakdown Voltage
BVCBO IC =-50 μA
Collector to Emitter Breakdown Volt...