UNISONIC TECHNOLOGIES CO., LTD
MMBT1616/A
NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR
DESCRI...
UNISONIC TECHNOLOGIES CO., LTD
MMBT1616/A
NPN EPITAXIAL SILICON
TRANSISTOR
NPN EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
* Audio frequency power amplifier * Medium speed switching
3
2 1
SOT-23
(JEDEC TO-236)
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
MMBT1616L-x-AE3-R
MMBT1616G-x-AE3-R
MMBT1616AL-x-AE3-R
MMBT1616AG-x-AE3-R
Note: Pin Assignment: B: Base E: Emitter Collector
Package
SOT-23 SOT-23
Pin Assignment 123 BEC BEC
Packing
Tape Reel Tape Reel
MMBT1616G-x-AE3-R
(1) Packing Type (2) Package Type (3) Rank (4) Green Package
(1) R: Tape Reel (2) AE3: SOT-23 (3) x: refer to Classification of hFE1 (4) G: Halogen Free and Lead Free, L: Lead Free
MARKING
UTC MMBT1616
UTC MMBT1616A
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QW-R206-036.J
MMBT1616/A
NPN EPITAXIAL SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
MMBT1616 MMBT1616A
VCBO
60 120
V
Collector to Emitter Voltage
MMBT1616 MMBT1616A
VCEO
50 60
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
DC IC
1A
Collector Current
Pulse
IC
2A
Total Collector Dissipation
PD 350 mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operati...