UTC TIP112
NPN EPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
FEATURES
* High DC Current Gain...
UTC TIP112
NPN EPITAXIAL PLANAR
TRANSISTOR
NPN EPITAXIAL SILICON DARLINGTON
TRANSISTOR
FEATURES
* High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min) * Low Collector-Emitter Saturation Voltage * Industrial Use
EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)
B
C
E
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature
SYMBOL
VCBO www.DataSheet4U.com VCEO VEBO Ic Icp IB Pc Pc Tj TSTG
VALUE
100 100 5 2 4 50 2 50 150 -65 ~ +150
UNIT
V V V A A mA W W °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
PARAMETER
Collector-Emitter Breakdown Voltage Collector Cut-Off Current Collector-Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output capacitance
SYMBOL
VCEO(SUS) ICBO ICEO IEBO hFE VCE(sat) VBE(on) Cob
TEST CONDITIONS
IC=30mA, IB=0 VCB=100V, IE=0 VCE=50V, IB=0 VBE=5V, IC=0 IC=1A, VCE=4V IC=2A, VCE=4V IC=2A, IB=8mA VCE=4V, IC=2A VCB=10V, IE=0, f=0.1MHz
MIN.
100
TYP.
MAX.
1 2 2
UNIT
V mA mA mA
1000 500 2.5 2.8 100 V V pF
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R203-022,A
UTC TIP112
NPN EPITAXIAL PLANAR
TRANSISTOR
TYPICAL CHARACTERISTICS
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R203-022,A
UTC TIP112
NPN EPITAXIAL PLANAR
TRANSISTOR
UTC assumes no res...