PLANAR TRANSISTOR. TIP41C Datasheet

TIP41C TRANSISTOR. Datasheet pdf. Equivalent

Part TIP41C
Description NPN EXPITAXIAL PLANAR TRANSISTOR
Feature UNISONIC TECHNOLOGIES CO., LTD TIP41C NPN PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR  D.
Manufacture UTC
Datasheet
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TIP41C
UNISONIC TECHNOLOGIES CO., LTD
TIP41C
NPN PLANAR TRANSISTOR
NPN EXPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC TIP41C is a NPN expitaxial planar transistor,
designed for using in general purpose amplifier and switching
applications.
FEATURE
* Complement to TIP42C
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
TIP41CL-x-TA3-T
TIP41CG-x-TA3-T
TO-220
TIP41CL-x-TF3-T
TIP41CG-x-TF3-T
TO-220F
TIP41CL-x-TN3-T
TIP41CG-x-TN3-T
TO-252
TIP41CL-x-TN3-R
TIP41CG-x-TN3-R
TO-252
Note: Pin Assignment: B: Base C: Collector E: Emitter
Pin Assignment
123
BCE
BCE
BCE
BCE
Packing
Tube
Tube
Tube
Tape Reel
MARKING
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Copyright © 2016 Unisonic Technologies Co., Ltd
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TIP41C
TIP41C
NPN PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector Base Voltage
VCBO 100 V
Collector to Emitter Voltage
Emitter-Base Voltage
VCEO 100 V
VEBO 5 V
Collector Current
DC
Pulse
IC
6A
10 A
Base Current
TO-220
IB
2A
65
TC=25C TO-220F
22 W
Collector Dissipation
TO-252
TO-220
PC
25
2
TA=25C TO-220F
0.7 W
TO-252
0.75
Junction Temperature
TJ 150 C
Storage Temperature
TSTG
-65 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Emitter Base Breakdown Voltage
BVEBO IE=100μA, IC=0
Collector Base Breakdown Voltage
BVCBO IC=100μA, IE=0
Collector Emitter Sustaining Voltage (Note) BVCEO IC=30mA, IB=0
Collector Cutoff Current
ICEO VCE=60V, IB=0
Collector Cutoff Current
ICES VCE=100V, VEB=0
Emitter Cutoff Current
IEBO VEB=5V, IC=0
Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=6A, IB=600mA
Base-Emitter On Voltage (Note)
VBE(ON) IC=6A, VCE=4V
DC Current Gain (Note)
hFE1
hFE2
IC=300mA, VCE=4V
IC=3A, VCE=4V
Current Gain Bandwidth Product
fT
Note: Pulse Test: PW300μs, Duty Cycle2%
VCE=10V, IC=500mA, f=1MHz
MIN TYP MAX UNIT
5V
100 V
100 V
0.7 mA
400 μA
1 mA
1.5 V
2.0 V
30
15 75
3 MHz
CLASSIFICATION OF hFE2
RANK
RANGE
A
15~30
B
28~48
C
45~75
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-008.J





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