Preliminary Specification N-Channel Dual-Gate MOSFET
□ Description
The TMF3202Z is an enhancement type N-channel field-e...
Preliminary Specification N-Channel Dual-Gate MOSFET
□ Description
The TMF3202Z is an enhancement type N-channel field-effect
transistor. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good crossmodulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT343 micro-miniature plastic package.
TMF3202Z
SOT343
Unit in mm
2
3
1
4
□ Features
- Gain controlled amplifier with AGC - Integrated gate protection diodes - High AGC-range, high gain, low noise figure
□ Applications
- Professional communications equipment
www.DataSheet4U.com
- Gain controlled input stage for UHF and VHF tuners
1. SOURCE 2. DRAIN
3. GATE 2 4. GATE 1
□ Absolute Maximum Ratings (Ta = 25 ℃)
Parameter Drain-Source Voltage Drain Current Gate 1 Current Total Power Dissipation Storage Temperature Operating Junction Temperature Symbol VDS ID IG1 Ptot Tstg Tj Ratings 10 30 ±10 200 -65 ~ 150 150 Unit V mA mA mW ℃ ℃
Caution : Electro Static Discharge sensitive device, observe handling precaution
http://www.tachyonics.co.kr October. 2005.
Page 1 of 8
Rev. 1.0
Preliminary Specification
□ DC Characteristics
( Tj = 25 ℃, unless otherwise specified )
PARAMETER Drain-source breakdown voltage Gate1-source breakdown voltage Gate2-source breakdown voltage Forward source-gate1 voltage Forward source-gate2 voltage Gate1-source threshold voltage Gate2-source thresho...
