Semiconductor
TMF8901F
Si RF LDMOS Transistor
SOT-89
Unit in mm
□ Applications
- VHF and UHF wide band amplifier
4
...
Semiconductor
TMF8901F
Si RF LDMOS
Transistor
SOT-89
Unit in mm
□ Applications
- VHF and UHF wide band amplifier
4
□ Features
- Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Drain efficiency ηD = 60 % (typ.)
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□ Marking
4
Pin Configuration
1. Gate 2. Source
8901
1 2 3
3. Drain 4. Source
□ Absolute Maximum Ratings (TA = 25 ℃)
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID Ptot Tch Tstg Ratings 13.0 4.0 1.2 3 150 -65 ~ 150 Unit V V A W ℃ ℃
TMF8901F
□ Electrical Characteristics (TA = 25 ℃)
Parameter Gate to Source Leakage Current Drain to Source Leakage Current Threshold Voltage Transconductance Drain to Source Breakdown Voltage Drain to Source On-Voltage Power Gain Output Power Operating Current Drain Efficiency Power Gain Output Power Operating Current Drain Efficiency Symbol IGSS IDSS Vth Gm BVDSS VDSon GP POUT Iop ηD GP POUT Iop ηD f = 470 MHz, PIN = 15 dBm VDS = 4.5 V, IDset = 50 ㎃ f = 470 MHz, PIN = 15 dBm VDS = 4.5 V, IDset = 50 ㎃ Test Conditions VGSS = 3.0 V VDSS = 8.5 V, VGS = 0 V VDS = 4.8 V, ID = 1 ㎃ VDS = 4.8 V, ID = 400 ㎃ IDSS = 10 ㎂ VGS = 4 V, ID = 600 ㎃ f = 470 MHz, PIN = 20 dBm VDS = 4.5 V, IDset = 200 ㎃ f = 470 MHz, PIN = 20 dBm VDS = 4.5 V, IDset = 200 ㎃ 13 0.4 12.5 32 670 60 14 29 400 44 0.8 1.0 700 Min. Typ. Max. 1 10 1.4 Unit ㎂ ...
