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UT134F Dataheets PDF



Part Number UT134F
Manufacturers UTC
Logo UTC
Description TRIACS
Datasheet UT134F DatasheetUT134F Datasheet (PDF)

UTC UT134F/G TRIACS DESCRIPTION Glass passivated triacs in a plastic envelope, intended for use in applications requiring highbidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. TRIAC 1 SYMBOL MT2 TO-126 G 1:MT1 2:MT2 3:GATE MT1 ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak off-state voltages UT134F/G-5 UT134F/G-6 UT134F/G-8 www.DataSh.

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UTC UT134F/G TRIACS DESCRIPTION Glass passivated triacs in a plastic envelope, intended for use in applications requiring highbidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. TRIAC 1 SYMBOL MT2 TO-126 G 1:MT1 2:MT2 3:GATE MT1 ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak off-state voltages UT134F/G-5 UT134F/G-6 UT134F/G-8 www.DataSheet4U.com SYMBOL VDRM RATINGS 500 600* 800 4 UNIT V RMS on-state current full sine wave; Tmb ≤107 °C Non-repetitive peak on-state current (Full sine wave; Tj = 25 °C prior to surge) t = 20ms t = 16.7 ms I2t for fusing t = 10 ms Repetitive rate of rise of on-state current after triggering ITM = 6 A; IG = 0.2A;dIG /dt = 0.2A/μs T2+ G+ T2+ GT2- GT2- G+ Peak gate voltage Peak gate current Peak gate power Average gate power (over any 20 ms period) Storage temperature Operating junction temperature IT(RMS) A ITSM I2t 25 27 3.1 A A2s dIT /dt 50 50 50 10 5 2 5 0.5 -40 ~ 150 125 A/μs VGM IGM PGM PG(AV) Tstg Tj V A W W ℃ ℃ UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-008,B UTC UT134F/G TRIAC *Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-state. The rate of rise of current should not exceed 3A/µs. THERMAL RESISTANCES PARAMETER Thermal resistance Junction to mounting base Full cycle Half cycle Thermal resistance Junction to ambient (In free air) SYMBOL Rth j-mb Rth j-a MIN TYP MAX 3.0 3.7 UNIT K/W K/W K/W 100 STATIC CHARACTERISTICS (Tj=25°C, unless otherwise stated) PARAMETER Gate trigger current IGT SYMBOL CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400V ; IT = 0.1 A; Tj =125°C VD = VDRM(max) ; Tj = 125 °C MIN TYP MAX UT134F UT134G UNIT 5 8 11 30 7 16 5 7 5 1.4 0.7 0.4 0.1 25 25 25 70 20 30 20 30 15 1.7 1.5 50 50 50 100 30 45 30 45 30 mA Latching current IL mA Holding current On-state voltage Gate trigger voltage IH VT VGT 0.25 mA V V V mA Off-state leakage current ID 0.5 DYNAMIC CHARACTERISTICS (Tj=25°C, unless otherwise stated) PARAMETER Critical rate of rise of Off-state voltage Critical rate of change of Commutating voltage Gate controlled turn-on time SYMBOL dVD /dt CONDITIONS VDM = 67% VDRM(max) ; Tj =125°C; exponential waveform; gate open circuit VDM=400V;Tj=95°C;IT(RMS)=4A; dIcom /dt =1.8A/ms; gate open circuit ITM = 6 A; VD= VDRM(max) ; IG=0.1A; dIG/dt=5A/µs MIN UT134F UT134G 50 200 TYP 250 MAX UNIT V/µs dVcom/dt 10 50 V/µs tgt 2 µs UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R401-008,B UTC UT134F/G TYPICAL CHARACTERISTICS 8 Ptot/W 7 6 5 4 3 2 1 0 0 1 α α Tmb(max)/C IT(RMS)/A TRIAC 101 5 4 3 2 1 104 α=180 107 120 110 90 60 113 30 116 119 122 107℃ 125 5 2 3 4 IT(RMS)/A Fig.1. Maximum on-state diss.


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