Document
UTC UT134F/G
TRIACS
DESCRIPTION
Glass passivated triacs in a plastic envelope, intended for use in applications requiring highbidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.
TRIAC
1
SYMBOL
MT2
TO-126
G
1:MT1 2:MT2 3:GATE
MT1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak off-state voltages UT134F/G-5 UT134F/G-6 UT134F/G-8
www.DataSheet4U.com
SYMBOL
VDRM
RATINGS
500 600* 800 4
UNIT
V
RMS on-state current full sine wave; Tmb ≤107 °C Non-repetitive peak on-state current (Full sine wave; Tj = 25 °C prior to surge) t = 20ms t = 16.7 ms I2t for fusing t = 10 ms Repetitive rate of rise of on-state current after triggering ITM = 6 A; IG = 0.2A;dIG /dt = 0.2A/μs T2+ G+ T2+ GT2- GT2- G+ Peak gate voltage Peak gate current Peak gate power Average gate power (over any 20 ms period) Storage temperature Operating junction temperature
IT(RMS)
A
ITSM
I2t
25 27 3.1
A A2s
dIT /dt
50 50 50 10 5 2 5 0.5 -40 ~ 150 125
A/μs
VGM IGM PGM PG(AV) Tstg Tj
V A W W ℃ ℃
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R401-008,B
UTC UT134F/G
TRIAC
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-state. The rate of rise of current should not exceed 3A/µs.
THERMAL RESISTANCES
PARAMETER
Thermal resistance Junction to mounting base Full cycle Half cycle Thermal resistance Junction to ambient (In free air)
SYMBOL
Rth j-mb Rth j-a
MIN
TYP
MAX
3.0 3.7
UNIT
K/W K/W K/W
100
STATIC CHARACTERISTICS (Tj=25°C, unless otherwise stated)
PARAMETER
Gate trigger current IGT
SYMBOL
CONDITIONS
VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400V ; IT = 0.1 A; Tj =125°C VD = VDRM(max) ; Tj = 125 °C
MIN
TYP
MAX
UT134F UT134G
UNIT
5 8 11 30 7 16 5 7 5 1.4 0.7 0.4 0.1
25 25 25 70 20 30 20 30 15 1.7 1.5
50 50 50 100 30 45 30 45 30
mA
Latching current IL
mA
Holding current On-state voltage Gate trigger voltage
IH VT VGT
0.25
mA V V V mA
Off-state leakage current
ID
0.5
DYNAMIC CHARACTERISTICS (Tj=25°C, unless otherwise stated)
PARAMETER
Critical rate of rise of Off-state voltage Critical rate of change of Commutating voltage Gate controlled turn-on time
SYMBOL
dVD /dt
CONDITIONS
VDM = 67% VDRM(max) ; Tj =125°C; exponential waveform; gate open circuit VDM=400V;Tj=95°C;IT(RMS)=4A; dIcom /dt =1.8A/ms; gate open circuit ITM = 6 A; VD= VDRM(max) ; IG=0.1A; dIG/dt=5A/µs
MIN UT134F UT134G 50 200
TYP
250
MAX
UNIT
V/µs
dVcom/dt
10
50
V/µs
tgt
2
µs
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R401-008,B
UTC UT134F/G
TYPICAL CHARACTERISTICS
8 Ptot/W 7 6 5 4 3 2 1 0 0 1 α α Tmb(max)/C IT(RMS)/A
TRIAC
101
5 4 3 2 1
104 α=180 107 120 110 90 60 113 30 116 119 122
107℃
125 5 2 3 4 IT(RMS)/A Fig.1. Maximum on-state diss.