UNISONIC TECHNOLOGIES CO.,
MMBT5401
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
FEATURES
*Coll...
UNISONIC TECHNOLOGIES CO.,
MMBT5401
PNP EPITAXIAL SILICON
TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
*Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc(max)=350mW *High current gain
2 1
MARKING
3
2L
SOT-23
*Pb-free plating product number:MMBT5401L
PIN CONFIGURATION
www.DataSheet4U.com
PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector
ORDERING INFORMATION Order Number Normal Lead free MMBT5401-AE3-R MMBT5401L-AE3-R Package SOT-23 Packing Tape Reel
www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,
1
QW-R206-011.C
MMBT5401
PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage DC Collector Current Power Dissipation Operating Temperature Storage Temperature
PNP EPITAXIAL SILICON
TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
SYMBOL VCBO VCEO VEBO IC PD TJ TSTG RATINGS -160 -150 -5 -600 350 +150 -40 ~ +150 UNIT V V V mA mW ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain(note) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure SYMBOL VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob NF TEST CONDITIONS IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-120V, IE=0 VBE=-3V, Ic=0 VCE=-5V, Ic=-1mA VCE=-5V, Ic=-10mA VCE=-5V, Ic=-50m...