MPSA45

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES ᴌHigh Breakdown Voltage. ᴌCollector Power Dissipation : PC=625mW. B MPSA44/45 EPITAXIAL PLANAR NPN TRANSISTOR C A N K E G MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range MPSA44 MPSA45 MPSA44 MPSA45 SYMBOL VCBO RATING 500 400 400 350 6 300 625 150 -55ᴕ150 UNIT V D H F F L VCEO VEBO IC PC Tj Tstg M C V V mA mW ᴱ ᴱ 1 2 3 DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (1) MPSA44 MPSA45 MPSA44 MPSA45 SYMBOL V(BR)CBO TEST CONDITION IC=100Ọ A, IE=0 MIN. 500 400 400 350 400 6.0 TYP. MAX. UNIT V V(BR)CEO V(BR)CES V(BR)EBO IC=1mA, IB=0 IC=100Ọ A, IB=0 IE=10Ọ A, IC=0 VCB=400V, IE=0 VCB=320V, IE=0 VCE=400V, IB=0 VCE=320V, IB=0 VEB=4V, IC=0 VCE=10V, IC=1mA - 100 100 500 500 100 200 0.5 0.75 V V V nA Collector-Emitter Breakdown Voltage (2) Emitter-Base Breakdown Voltage Collector Cut off Current MPSA44 MPSA45 MPSA44 MPSA45 ICBO Collector Cut off Current Emitter Cutoff Current ICES IEBO 40 50 45 40 - - nA nA DC Current Gain * hFE VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, ...