DC COMPONENTS CO., LTD.
R
MPSA92M
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR...
DC COMPONENTS CO., LTD.
R
MPSA92M
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
PNP EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for use as a video output to drive color CRT, or as a dialer circuit in electronic telephone.
TO-92
Pinning
1 = Emitter 2 = Base 3 = Collector
.190(4.83) .170(4.33)
.190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -300 -300 -5 625 +150 -55 to +150 Unit V V V
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
www.DataSheet4U.com -800 mA
3 2 1
mW
o o
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICEO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT 380µs, Duty Cycle
Min -300 -300 -5 80 80 40 50 2%
Typ -0.15 -
Max -5 -0.1 -0.7 -0.9 -1 -
Unit V V V µA µA V V V V MHz
Test Conditions IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCE=-300V, IB=0 VEB=-3V, IC=0 IC=-30mA, IB=-1mA IC=-100mA, IB=-10mA IC=-20mA, IB=-2mA IC=-100mA, IB=-10mA IC=-10mA, VCE=-10V IC=-100mA, VCE=-10V IC=-200mA, VCE=-10V IC=-10mA, VCE=-20V, f=100MHz
Collector-Base Breakdown Volatge Co...