PZT5401

UNISONIC TECHNOLOGIES CO., LTD. PZT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *High Collector-Emitter Voltage: VCEO=-150V *High current gain APPLICATIONS *Telephone Switching Circuit *Amplifier 1 SOT-223 *Pb-free plating product number:PZT5401L PIN CONFIGURATION PIN NO. PIN NAME 1 Base 2 Collector 3 Emitter www.DataSheet4U.com ORDERING INFORMATION Order Number Normal Lead Free Plating PZT5401-AA3-R PZT5401L-AA3-R Package SOT-223 Packing Tape & Reel www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., LTD. 1 of 4 QW-R207-013,A PZT5401 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Power Dissipation Operating Junction Temperature Storage Temperature PNP EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25 , unless otherwise specified) SYMBOL VCBO VCEO VEBO IC PD TJ TSTG RATINGS -160 -150 -5 -600 2 +150 -40 ~ +150 UNIT V V V mA W ELECTRICAL CHARACTERISTICS (Ta= 25 , unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain(note) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure SYMBOL VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob NF TEST CONDITIONS IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=120V, IE=0 VBE=-3V, Ic=0 VCE...