UNISONIC TECHNOLOGIES CO., LTD
PZTA14
NPN SILICON TRANSISTOR
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC PZTA14 is a...
UNISONIC TECHNOLOGIES CO., LTD
PZTA14
NPN SILICON
TRANSISTOR
DARLINGTON
TRANSISTOR
DESCRIPTION
The UTC PZTA14 is a Darlington
transistor.
FEATURES
* Collector-Emitter Voltage: VCES = 30V * Collector Power Dissipation: PC(MAX) = 1W
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
PZTA14L-AA3-R
PZTA14G-AA3-R
Package SOT-223
Pin Assignment 123 BCE
Packing Tape Reel
www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 2
QW-R207-004, D
PZTA14
NPN SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO 30 V
Collector-Emitter Voltage
VCES 30 V
Emitter-Base Voltage Collector Power Dissipation
VEBO PC
10 V 1W
Collector Current
IC 500 mA
Junction Temperature Storage Temperature
TJ TSTG
150 -55 ~ +150
°C °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
Collector-Emitter Breakdown Voltage Collector Cut-Off Current
BVCES ICBO
Emitter Cut-Off Current
IEBO
DC Current Gain Collector-Emitter Saturation Voltage
hFE VCE(SAT)
Base-Emitter on Voltage
VBE(ON)
Current Gain Bandwidth Product
fT
Pulse test: Pulse Width<300μs, Duty Cycle=2%
TEST CONDITIONS IC=100μA, IB=0 VCB=30V, IE=0 VEB=10V, IC=0 VCE=5V, IC=100mA IC=100mA,...