PZTA44

PZTA44 NPN Silicon Planar Epitaxial Transistor BASE 1 3 EMITTER COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 4 1 2 3 SOT-223 Value 400 500 6 300 2 150 -55 to +150 Unit V V V mA W ˚C ˚C ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25˚C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC(DC) PD Tj Tstg ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC =1mA) Symbol V(BR)CEO www.DataSheet4U.com Min 400 500 6 - Typ - Max 100 500 100 Unit V V V nA nA nA Collector-Base Breakdown Voltage (IC =100µA) (IE =10 µA) V(BR)CBO V(BR)EBO ICBO ICES IEBO hFE1 hFE2 hFE3 hFE4 VCE(sat) Emitter-Base Breakdown Voltage Collector-Emitter Cutoff Current (VCB =400V) Collector Cutoff Current (VCB=400V) Emitter-Base Cutoff Current (VEB=4V) DC Current Gain (VCE = (VCE = (VCE = (VCE = 10V, 10V, 10V, 10V, IC = IC = IC = IC = 1mA) 10mA) 50mA) 100mA) 40 50 45 40 - 4 300 375 750 750 6 - Collector-Emitter Saturation Voltages (IC = 20mA, I B = 2mA) (IC = 50mA, I B = 5mA) mV mV pF Base-Emitter Saturation Voltages (IC = 10mA, I B = 1mA) VBE(sat) Cob Output Capacitance (VCE = 20 Vdc, f = 1MHz) Device Marking PZTA44=44 WEITRON http://www.weitron.com.tw 1/3 02-Jun-05 PZTA44 Characteristics Curve 1000 100000 Saturation Voltage (mA) 10000 100 hFE VCE = 10V 1000 VBE(sat) @IC=10 IB 100 VCE(sat) @IC=10 IB 10 10...