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PZTA93

UTC

HIGH VOLTAGE PNP TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD PZTA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION The UTC PZTA92...


UTC

PZTA93

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Description
UNISONIC TECHNOLOGIES CO., LTD PZTA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier.  FEATURES * Collector-emitter voltage: VCEO=-300V (UTC PZTA92) VCEO=-200V (UTC PZTA93) * Complement to UTC PZTA42/43 * Collector power dissipation: PC(MAX)=1W  ORDERING INFORMATION Ordering Number PZTA92G-AA3-R PZTA93G-AA3-R Package SOT-223 SOT-223 Pin Assignment 123 BCE BCE Packing Tape Reel Tape Reel  MARKING PZTA92 PZTA93 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R207-006.E PZTA92/93 PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage PZTA92 PZTA93 VCBO -300 -200 V V Collector-Emitter Voltage PZTA92 PZTA93 VCEO -300 -200 V V Emitter-Base Voltage Collector Current VEBO IC -5 -500 V mA Collector Power Dissipation Pc 1 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=-100μA, IE=0 PZTA92 PZTA93 Collector-Emitter Breakdown Vo...




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