PZTA92T1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZTA92T1/D High Voltage Transistor PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 PZTA92T1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value – 300 –300 – 5.0 – 500 1.5 – 65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts °C °C SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT 4 1 2 3 CASE 318E–04, STYLE 1 TO–261AA DEVICE MARKING P2D THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RθJA Max 83.3 www.DataSheet4U.com Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0) Collector–Base Cutoff Current (VCB = – 200 Vdc, IE = 0) Emitter–Base Cutoff Current (VBE = – 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO – 300 – 300 – 5.0 — — — — — – 0.25 – 0.1 Vdc Vdc Vdc µAdc µAdc ON CHARACTERISTICS DC Current Gain(2) (IC = – 1.0 mAdc, VCE = – 10 Vdc) (IC = –10 mAdc, VCE = – 10 Vdc) (IC = – 30 mAdc, VCE = – 10 Vdc) Saturation Voltages (IC = –20 mAdc, IB = –2.0 mAdc) (IC = –20 mAdc, IB = –2.0 mAdc) hFE 2...