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STW14NC50

ST Microelectronics

N-CHANNEL POWER MOSFET

N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh™II MOSFET TYPE STW14NC50 s s s s s STW14NC50 VDSS 500V RDS(on) < 0.38Ω ...



STW14NC50

ST Microelectronics


Octopart Stock #: O-577587

Findchips Stock #: 577587-F

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Description
N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh™II MOSFET TYPE STW14NC50 s s s s s STW14NC50 VDSS 500V RDS(on) < 0.38Ω ID 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 1 3 2 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s HIGH CURRENT, HIGH SPEED SWITCHING www.DataSheet4U.com s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 14 8.7 56 190 1.5 3.5 –65 to 150 150 (1)ISD ≤14A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C °C ()Pulse width limited by safe operating area May 2001 1/8 STW14NC50 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resista...




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