UTC 4124
NPN TRIPLE DIFFUSED SILICON TRANSISTOR
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS
DESCRIPTION
UTC 41...
UTC 4124
NPN TRIPLE DIFFUSED SILICON
TRANSISTOR
HIGH FREQUENCY SWITCHING
TRANSISTORS FOR BALLASTERS
DESCRIPTION
UTC 4124 is designed for specially used for electronic ballasters in 110VAC environment.
FEATURES
* Triple diffused technology. * High switching speed
1
TO-126
1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number:4124L
ABSOLUTE MAXIMUM RATINGS
(Tc = 25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Peak Collector Current Peak Collector Consume Dissipation Peak Junction Temperature Storage Temperature SYMBOL VCBO VCEO www.DataSheet4U.com VEBO IC PC TJ TSTG RATINGS 400 200 7 1.5 20 150 -40 ~ +150 UNIT V V V A W ℃ ℃
ELECTRICAL CHARACTERISTICS
(Ta = 25℃) PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Fall Time Storage Time Cut-off Frequency SYMBOL VCEO (SUS) V (BR) CBO V (BR) EBO ICBO ICEO IEBO hFE (1) hFE (2) VCE (sat) VBE (sat) tf ts fT TEST CONDITIONS IC=10mA, IB=0 IC=1mA, IB=0 IE=1mA, IC=0 VCB=400V, IE=0 VCE=200V, IB=0 VEB=7V, Ic=0 VCE=10V, Ic=0.2A VCE=5V, Ic=1.5A IC=0.4A, IB=0.1A IC=1.5A, IB=0.5A IC=0.8A, IB=0.2A IC=1A, IB1= -IB2 = 0.2A IC=1A, IB1= -IB2 = 0.2A VCE=10V, Ic=0.1A MIN 200 400 7 TYP MAX UNIT V V V µA µA µA
10 5
100 100 100 60 40 0.5 2 1.2 0.7 4
4
V V V µs µ...