4124 Datasheet: HIGH FREQUENCY SWITCHING TRANSISTORS





4124 HIGH FREQUENCY SWITCHING TRANSISTORS Datasheet

Part Number 4124
Description HIGH FREQUENCY SWITCHING TRANSISTORS
Manufacture UTC
Total Page 3 Pages
PDF Download Download 4124 Datasheet PDF

Features: UTC 4124 NPN TRIPLE DIFFUSED SILICON TR ANSISTOR HIGH FREQUENCY SWITCHING TRAN SISTORS FOR BALLASTERS DESCRIPTION UTC 4124 is designed for specially used for electronic ballasters in 110VAC enviro nment. FEATURES * Triple diffused tech nology. * High switching speed 1 TO-12 6 1: BASE 2: COLLECTOR 3: EMITTER *Pb- free plating product number:4124L ABSO LUTE MAXIMUM RATINGS (Tc = 25℃) PARAM ETER Collector-Base Voltage Collector-E mitter Voltage Collector-Emitter Voltag e Peak Collector Current Peak Collector Consume Dissipation Peak Junction Temp erature Storage Temperature SYMBOL VCBO VCEO www.DataSheet4U.com VEBO IC PC TJ TSTG RATINGS 400 200 7 1.5 20 150 -40 ~ +150 UNIT V V V A W ℃ ℃ ELECTRIC AL CHARACTERISTICS (Ta = 25℃) PARAMET ER Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitt er-Base Breakdown Voltage Collector-Bas e Cutoff Current Collector-Emitter Cuto ff Current Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Satur.

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UTC 4124
NPN TRIPLE DIFFUSED SILICON TRANSISTOR
HIGH FREQUENCY SWITCHING
TRANSISTORS FOR BALLASTERS
DESCRIPTION
UTC 4124 is designed for specially used for electronic
ballasters in 110VAC environment.
FEATURES
* Triple diffused technology.
* High switching speed
1
TO-126
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number:4124L
ABSOLUTE MAXIMUM RATINGS
(Tc = 25)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Peak Collector Current
Peak Collector Consume Dissipation
Peak Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
Vwww.DEaBtaOSheet4U.com
IC
PC
TJ
TSTG
RATINGS
400
200
7
1.5
20
150
-40 ~ +150
UNIT
V
V
V
A
W
ELECTRICAL CHARACTERISTICS
(Ta = 25)
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Fall Time
Storage Time
Cut-off Frequency
SYMBOL
VCEO (SUS)
V (BR) CBO
V (BR) EBO
ICBO
ICEO
IEBO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
tf
ts
fT
TEST CONDITIONS
IC=10mA, IB=0
IC=1mA, IB=0
IE=1mA, IC=0
VCB=400V, IE=0
VCE=200V, IB=0
VEB=7V, Ic=0
VCE=10V, Ic=0.2A
VCE=5V, Ic=1.5A
IC=0.4A, IB=0.1A
IC=1.5A, IB=0.5A
IC=0.8A, IB=0.2A
IC=1A, IB1= -IB2 = 0.2A
IC=1A, IB1= -IB2 = 0.2A
VCE=10V, Ic=0.1A
MIN
200
400
7
10
5
4
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com
TYP MAX
100
100
100
60
40
0.5
2
1.2
0.7
4
UNIT
V
V
V
µA
µA
µA
V
V
V
µs
µs
MHz
1
QW-R204-019,A

        






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