4128 TRANSISTORS Datasheet

4128 Datasheet, PDF, Equivalent


Part Number

4128

Description

HIGH FREQUENCY SWITCHING TRANSISTORS

Manufacture

UTC

Total Page 2 Pages
Datasheet
Download 4128 Datasheet


4128
UTC 4128
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY SWITCHING
TRANSISTORS FOR BALLASTERS
DESCRIPTION
UTC 4128 is designed for specially used for electronic
ballasters in 110VAC environment.
FEATURES
* Triple diffused technology.
* High switching speed
1
TO-126
ABSOLUTE MAXIMUM RATINGS
(Tc = 25)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Peak Collector Current
Peak Collector Consume Dissipation
Peak Junction Temperature
Storage Temperature
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: 4128L
SYMBOL
VCBO
VCEO
Vwww.DEaBtaOSheet4U.com
IC
PC
TJ
TSTG
RATINGS
400
200
7
5
40
150
-40 ~ +150
UNIT
V
V
V
A
W
ELECTRICAL CHARACTERISTICS
(Ta = 25)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Emitter Maintenance Voltage VCEO (SUS) IC=10mA, IB=0
Collector-Base Breakdown Voltage
V (BR) CBO IC=1mA, IB=0
200
400
Emitter-Base Breakdown Voltage
V (BR) EBO IE=1mA, IC=0
7
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
ICBO
ICEO
VCB=400V, IE=0
VCE=200V, IB=0
Emitter-Base Cutoff Current
IEBO VEB=7V, Ic=0
DC Current Gain
hFE (1)
hFE (2)
VCE=10V, Ic=0.5A
VCE=5V, Ic=2A
10
10
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE (sat)
VBE (sat)
IC=1A, IB=0.2A
IC=4A, IB=1A
IC=2A, IB=0.5A
Fall Time
tf IC=2A, IB1= -IB2 = 0.4A
Storage Time
Feature Frequency
ts IC=2A, IB1= -IB2 = 0.4A
fT VCE=10V, Ic=0.5A
4
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com
TYP MAX
100
100
100
60
40
0.8
2
1.6
0.9
4
UNIT
V
V
V
µA
µA
µA
V
V
V
µs
µs
MHz
1
QW-R204-020,A

4128
UTC 4128
CHARACTERISTICS CURVES
NPN EPITAXIAL SILICON TRANSISTOR
Safe work area
4
2
101 8
6
4
2
100 8
6
4
IC MAX
PULSED
IC MAX
CONT
PULSE OPERATION *
2
10
-1
8
6
4
DC OPERATION
* For single
nonrepetitive pulse
2
10 -2
100
2
4 6 8101 2
4 6 8102 2
10µs
100µs
1ms
10ms
4 68
VCE (V)
hFE-IC
6 VCC=5V
4
2
102
8
6
4
2
101
8
6
4
TJ=125
TJ=25
2
100
10 -2
2
4
6
8
10
-1
2
4
6
8
10
0
2
IC (A)
4 68
hFE = 5
6
4
2
100
8
6
4
2
10-18
6
4
2
10-2
10-1
2
VCE(sat) (V)-IC
TJ=125
TJ=25
4
6
8
10
0
2
IC (A)
4
hFE = 5
VBE(sat) (V)-IC
1.0
0.9
0.8
0.7
0.6
0.5
10-1
TJ=25
TJ=125
10 0
IC (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com
2
QW-R204-020,A


Features UTC 4128 HIGH FREQUENCY SWITCHING TRANSI STORS FOR BALLASTERS DESCRIPTION NPN E PITAXIAL SILICON TRANSISTOR UTC 4128 i s designed for specially used for elect ronic ballasters in 110VAC environment. FEATURES * Triple diffused technology . * High switching speed 1 TO-126 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free p lating product number: 4128L ABSOLUTE MAXIMUM RATINGS (Tc = 25℃) PARAMETER Collector-Base Voltage Collector-Emitte r Voltage Collector-Emitter Voltage Pea k Collector Current Peak Collector Cons ume Dissipation Peak Junction Temperatu re Storage Temperature SYMBOL VCBO VCEO www.DataSheet4U.com VEBO IC PC TJ TSTG RATINGS 400 200 7 5 40 150 -40 ~ +150 UNIT V V V A W ℃ ℃ ELECTRICAL CHAR ACTERISTICS (Ta = 25℃) PARAMETER Coll ector-Emitter Maintenance Voltage Colle ctor-Base Breakdown Voltage Emitter-Bas e Breakdown Voltage Collector-Base Cuto ff Current Collector-Emitter Cutoff Cur rent Emitter-Base Cutoff Current DC Cur rent Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation .
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