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4128 Dataheets PDF



Part Number 4128
Manufacturers UTC
Logo UTC
Description HIGH FREQUENCY SWITCHING TRANSISTORS
Datasheet 4128 Datasheet4128 Datasheet (PDF)

UTC 4128 HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION NPN EPITAXIAL SILICON TRANSISTOR UTC 4128 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed 1 TO-126 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 4128L ABSOLUTE MAXIMUM RATINGS (Tc = 25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Peak Collector Current Peak Collecto.

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UTC 4128 HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION NPN EPITAXIAL SILICON TRANSISTOR UTC 4128 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed 1 TO-126 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 4128L ABSOLUTE MAXIMUM RATINGS (Tc = 25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Peak Collector Current Peak Collector Consume Dissipation Peak Junction Temperature Storage Temperature SYMBOL VCBO VCEO www.DataSheet4U.com VEBO IC PC TJ TSTG RATINGS 400 200 7 5 40 150 -40 ~ +150 UNIT V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta = 25℃) PARAMETER Collector-Emitter Maintenance Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Fall Time Storage Time Feature Frequency SYMBOL VCEO (SUS) V (BR) CBO V (BR) EBO ICBO ICEO IEBO hFE (1) hFE (2) VCE (sat) VBE (sat) tf ts fT TEST CONDITIONS IC=10mA, IB=0 IC=1mA, IB=0 IE=1mA, IC=0 VCB=400V, IE=0 VCE=200V, IB=0 VEB=7V, Ic=0 VCE=10V, Ic=0.5A VCE=5V, Ic=2A IC=1A, IB=0.2A IC=4A, IB=1A IC=2A, IB=0.5A IC=2A, IB1= -IB2 = 0.4A IC=2A, IB1= -IB2 = 0.4A VCE=10V, Ic=0.5A MIN 200 400 7 TYP MAX UNIT V V V µA µA µA 10 10 100 100 100 60 40 0.8 2 1.6 0.9 4 4 V V V µs µs MHz 1 QW-R204-020,A UTC UNISONIC TECHNOLOGIES CO., LTD. www.unisonic.com UTC 4128 CHARACTERISTICS CURVES Safe work area 4 2 NPN EPITAXIAL SILICON TRANSISTOR hFE-IC 6 VCC=5V 10 1 8 6 4 2 IC MAX PULSED PULSE OPERATION * 10µs 4 2 IC (A) 8 6 4 2 -1 8 6 4 2 -2 hFE 10 0 IC MAX CONT 100µs 1ms 10ms 10 2 8 6 4 2 TJ=125℃ TJ=25℃ 10 DC OPERATION * For single nonrepetitive pulse 2 4 6 8 2 4 6 8 2 10 1 8 6 4 2 10 10 0 10 1 10 V CE (V) 2 4 6 8 10 0 10 -2 2 4 6 8 10 -1 2 4 6 8 10 IC (A) 0 2 4 6 8 VCE(sat) (V)-IC 6 4 VBE(sat) (V)-IC hFE = 5 TJ=125℃ hFE = 5 2 10 VCE (sat) (V) 0 1.0 VBE (sat) (V) TJ=25℃ 8 6 4 2 0.9 0.8 0.7 TJ=125℃ 0.6 -1 10 8 6 4 2 TJ=25℃ 10 -2 10 -1 2 4 6 8 10 IC (A) 0 2 4 0.5 10 -1 10 IC (A) 0 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be c.


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