JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8550S
TRANSISTOR£¨PNP
£©
T...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate
Transistors
8550S
TRANSISTOR£¨
PNP
£©
TO¡ª 92
FEATURE Power dissipation PCM : 0.625 W£¨ Tamb=25¡æ£© Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE£¨ 1£© DC current gain hFE£¨ 2£© Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat)
1.EMITTER
2. COLLECTOR
3.BASE
1 2 3
unless
Test
otherwise
MIN
specified£©
TYP MAX UNIT V V V -0.1 -0.1 -0.1 ¦Ì A ¦Ì A ¦Ì A
conditions
Ic= -100¦Ì A , IE=0 Ic= -0.1 mA£¬ IB=0
www.DataSheet4U.com
-40 -25 -5
IE= -100¦Ì A£¬ IC=0 VCB= -40 V , VCE= -20 V , VEB= - 3 IE=0 IB=0
V£¬ IC=0 85 50
VCE= -1 V, IC= -50m A VCE= -1 V, IC= -500m A IC=-500mA, IB=-50 mA IC=-500mA, IB=-50 mA VCE=- 6 V, I C=-20mA
300
-0.6 -1.2
V V
Transition frequency
fT f =30MHz
150
MHz
CLASSIFICATION OF h FE(1)
Rank Range B 85-160 C 120-200 D 160-300
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b ¦Õ
e e1
Symbol A A1 b c D D1 E e e1 L Ö
Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3....