MMBT5551

UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain 3 1 2 SOT-23 *Pb-free plating product number:MMBT5551L www.DataSheet4U.com ORDERING INFORMATION Order Number Normal Lead Free Plating MMBT5551-x-AE3-6-R MMBT5551L-x-AE3-6-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MMBT5551L-x-AE3-6-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Lead Plating (1) R: Tape Reel (2) refer to Pin Assignment (3) AE3: SOT-23 (4) x: refer to Classification of hFE (5) L: Lead Free Plating, Blank: Pb/Sn MARKING G1 www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-010,D MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25 ) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO 180 V Collector -Emitter Voltage VCEO 160 V Emitter -Base Voltage VEBO 6 V DC Collector Current IC 600 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25 , unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter...